是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 包装说明: | R-XXMA-X |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.7 | Is Samacsys: | N |
配置: | BRIDGE, 4 ELEMENTS | 二极管元件材料: | SILICON |
二极管类型: | BRIDGE RECTIFIER DIODE | JESD-30 代码: | R-XXMA-X |
元件数量: | 4 | 相数: | 1 |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | MICROELECTRONIC ASSEMBLY | 峰值回流温度(摄氏度): | NOT SPECIFIED |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UNSPECIFIED |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
N2180B1EN1S | MICROSEMI |
获取价格 |
Silicon Power Rectifier Assemblies Plate Heatsink | |
N2180B1FB1S | MICROSEMI |
获取价格 |
Bridge Rectifier Diode, 1 Phase, Silicon, | |
N2180B1FBC1S | MICROSEMI |
获取价格 |
Bridge Rectifier Diode, 1 Phase, Silicon, | |
N2180B1FN1S | MICROSEMI |
获取价格 |
Bridge Rectifier Diode, 1 Phase, Silicon, | |
N2180B1TB1S | MICROSEMI |
获取价格 |
Bridge Rectifier Diode, 1 Phase, Silicon, | |
N2180B1TBC1S | MICROSEMI |
获取价格 |
Bridge Rectifier Diode, 1 Phase, Silicon, | |
N2180B1TC1S | MICROSEMI |
获取价格 |
Bridge Rectifier Diode, 1 Phase, Silicon, | |
N2180B1TN1S | MICROSEMI |
获取价格 |
Bridge Rectifier Diode, 1 Phase, Silicon, | |
N2180C1EB1S | MICROSEMI |
获取价格 |
Silicon Power Rectifier Assemblies Plate Heatsink | |
N2180C1EBC1S | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, Silicon, |