Datasheet > N1463DH41GOO

N1463DH41GOO

更新时间： 2024-11-19 09:28:11

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
8页	77K
描述
Silicon Controlled Rectifier, 5590 A, 4100 V, SCR, 101A325, 3 PIN

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N1463DH41GOO 数据手册

Date : Dec-99

Rat Rep : 99T11

Issue 2

WESTCODE

Converter Thyristor

Type N1463xx36xxx to N1463xx42xxx

Absolute maximum ratings

MAXIMUM

LIMITS

VOLTAGE RATINGS

UNITS

V_DRM

V_DSM

V_RRM

V_RSM

Repetitive peak off-state voltage, (note 1).

Non-repetitive peak off-state voltage, (note 1).

Repetitive peak reverse voltage, (note 1).

Non-repetitive peak reverse voltage, (note 1).

3600-4200

3700-4300

MAXIMUM

LIMITS

RATINGS

UNITS

I_T(AV)

I_T(RMS)

I_T(d.c.)

I_TSM

I_TSM2

I²t

Mean on-state current, Tsink=55°C, (note 2).

Mean on-state current. Tsink=85°C, (note 5).

Mean on-state current. Tsink=85°C, (note 3).

Nominal RMS on-state current, 25°C, (note 2).

D.C. on-state current, 25°C, (note 7).

2850

1960

1200

5590

4900

Peak non-repetitive surge tp=10ms, V_RM=0.6V_RRM, (note 4).

Peak non-repetitive surge tp=10ms, V_RM≤10V, (note 4).

I²t capacity for fusing tp=10ms, V_RM=0.6V_RRM, (note 4).

I²t capacity for fusing tp=10ms, V_RM≤10V, (note 4).

I²t capacity for fusing tp=3ms, V_RM≤0.6V_RRM, (note 4).

Critical rate of rise of on-state current (continuous), (note 6).

Critical rate of rise of on-state current (intermittent), (note 6).

Peak forward gate current.

46.8×10³

52.0×10³

11.0×10⁶

13.5×10⁶

8.2×10⁶

150

A²s

A/µs

I²t

di/dt

300

I_FGM

V_RGM

P_G(AV)

P_GM

V_GD

Peak reverse gate voltage.

Mean forward gate power.

Peak forward gate power.

Non-trigger gate voltage, (Note 5).

0.25

T_HS

Operating temperature range.

-40 to +125

-40 to +150

°C

T_stg

Storage temperature range.

Notes:-

1) De-rating factor of 0.13% per K is applicable for T_jbelow 25°C.

2) Doubleside cooled, single phase; 50Hz, 180° half-sinewave.

3) Singleside cooled, single phase; 50Hz, 180° half-sinewave.

4) Half-sinewave, 125°C T_jinitial.

5) Rated V_DRM.

6) V_D=67%V_DRM, I_T=5500A, I_FG=2A, t_r=500ns.

7) Doubleside cooled.

Types N1463xx36xxx to N1463xx42xxx Rat. Rep. 99T11

page 1 of 8

December, 1999

12 3 4 5 6 7 8

中文翻译

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与N1463DH41GOO相关器件

型号	品牌	获取价格	描述	数据表
N1463DH41JOO	IXYS	获取价格	Silicon Controlled Rectifier, 5590A I(T)RMS, 4100V V(DRM), 4100V V(RRM), 1 Element, 101A32
N1463DH41KOO	IXYS	获取价格	Silicon Controlled Rectifier, 5590A I(T)RMS, 4100V V(DRM), 4100V V(RRM), 1 Element, 101A32
N1463DH41LOO	IXYS	获取价格	Silicon Controlled Rectifier, 5590A I(T)RMS, 4100V V(DRM), 4100V V(RRM), 1 Element, 101A32
N1463DH42	IXYS	获取价格	Silicon Controlled Rectifier, 5590A I(T)RMS, 4200V V(DRM), 4200V V(RRM), 1 Element, 101A32
N1463DH42GOO	IXYS	获取价格	Silicon Controlled Rectifier, 5590A I(T)RMS, 4200V V(DRM), 4200V V(RRM), 1 Element, 101A32
N1463DH42HOO	IXYS	获取价格	Silicon Controlled Rectifier, 5590 A, 4200 V, SCR, 101A325, 3 PIN
N1463DH42JOO	IXYS	获取价格	Silicon Controlled Rectifier, 5590A I(T)RMS, 4200V V(DRM), 4200V V(RRM), 1 Element, 101A32
N1463DH42LOO	IXYS	获取价格	Silicon Controlled Rectifier, 5590A I(T)RMS, 4200V V(DRM), 4200V V(RRM), 1 Element, 101A32
N1463DZ36	IXYS	获取价格	Silicon Controlled Rectifier, 5590 A, 3600 V, SCR, 101A325, 3 PIN
N1463DZ36GOO	IXYS	获取价格	Silicon Controlled Rectifier, 5590A I(T)RMS, 3600V V(DRM), 3600V V(RRM), 1 Element, 101A32

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