Datasheet > N1463DZ36GOO

N1463DZ36GOO

更新时间： 2024-11-22 10:53:55

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
8页	77K
描述
Silicon Controlled Rectifier, 5590A I(T)RMS, 3600V V(DRM), 3600V V(RRM), 1 Element, 101A325, 3 PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

N1463DZ36GOO 数据手册

Date : Dec-99

Rat Rep : 99T11

Issue 2

WESTCODE

Converter Thyristor

Type N1463xx36xxx to N1463xx42xxx

Absolute maximum ratings

MAXIMUM

LIMITS

VOLTAGE RATINGS

UNITS

V_DRM

V_DSM

V_RRM

V_RSM

Repetitive peak off-state voltage, (note 1).

Non-repetitive peak off-state voltage, (note 1).

Repetitive peak reverse voltage, (note 1).

Non-repetitive peak reverse voltage, (note 1).

3600-4200

3700-4300

MAXIMUM

LIMITS

RATINGS

UNITS

I_T(AV)

I_T(RMS)

I_T(d.c.)

I_TSM

I_TSM2

I²t

Mean on-state current, Tsink=55°C, (note 2).

Mean on-state current. Tsink=85°C, (note 5).

Mean on-state current. Tsink=85°C, (note 3).

Nominal RMS on-state current, 25°C, (note 2).

D.C. on-state current, 25°C, (note 7).

2850

1960

1200

5590

4900

Peak non-repetitive surge tp=10ms, V_RM=0.6V_RRM, (note 4).

Peak non-repetitive surge tp=10ms, V_RM≤10V, (note 4).

I²t capacity for fusing tp=10ms, V_RM=0.6V_RRM, (note 4).

I²t capacity for fusing tp=10ms, V_RM≤10V, (note 4).

I²t capacity for fusing tp=3ms, V_RM≤0.6V_RRM, (note 4).

Critical rate of rise of on-state current (continuous), (note 6).

Critical rate of rise of on-state current (intermittent), (note 6).

Peak forward gate current.

46.8×10³

52.0×10³

11.0×10⁶

13.5×10⁶

8.2×10⁶

150

A²s

A/µs

I²t

di/dt

300

I_FGM

V_RGM

P_G(AV)

P_GM

V_GD

Peak reverse gate voltage.

Mean forward gate power.

Peak forward gate power.

Non-trigger gate voltage, (Note 5).

0.25

T_HS

Operating temperature range.

-40 to +125

-40 to +150

°C

T_stg

Storage temperature range.

Notes:-

1) De-rating factor of 0.13% per K is applicable for T_jbelow 25°C.

2) Doubleside cooled, single phase; 50Hz, 180° half-sinewave.

3) Singleside cooled, single phase; 50Hz, 180° half-sinewave.

4) Half-sinewave, 125°C T_jinitial.

5) Rated V_DRM.

6) V_D=67%V_DRM, I_T=5500A, I_FG=2A, t_r=500ns.

7) Doubleside cooled.

Types N1463xx36xxx to N1463xx42xxx Rat. Rep. 99T11

page 1 of 8

December, 1999

12 3 4 5 6 7 8

中文翻译

下载PDF

与N1463DZ36GOO相关器件

型号	品牌	获取价格	描述	数据表
N1463DZ36HOO	IXYS	获取价格	Silicon Controlled Rectifier, 5590 A, 3600 V, SCR, 101A325, 3 PIN
N1463DZ36JOO	IXYS	获取价格	Silicon Controlled Rectifier, 5590A I(T)RMS, 3600V V(DRM), 3600V V(RRM), 1 Element, 101A32
N1463DZ36KOO	IXYS	获取价格	Silicon Controlled Rectifier, 5590A I(T)RMS, 3600V V(DRM), 3600V V(RRM), 1 Element, 101A32
N1463DZ36LOO	IXYS	获取价格	Silicon Controlled Rectifier, 5590 A, 3600 V, SCR, 101A325, 3 PIN
N1463DZ37	IXYS	获取价格	Silicon Controlled Rectifier, 5590 A, 3700 V, SCR, 101A325, 3 PIN
N1463DZ37GOO	IXYS	获取价格	Silicon Controlled Rectifier, 5590A I(T)RMS, 3700V V(DRM), 3700V V(RRM), 1 Element, 101A32
N1463DZ37HOO	IXYS	获取价格	Silicon Controlled Rectifier, 5590 A, 3700 V, SCR, 101A325, 3 PIN
N1463DZ37JOO	IXYS	获取价格	Silicon Controlled Rectifier, 5590 A, 3700 V, SCR, 101A325, 3 PIN
N1463DZ37LOO	IXYS	获取价格	Silicon Controlled Rectifier, 5590 A, 3700 V, SCR, 101A325, 3 PIN
N1463DZ38	IXYS	获取价格	Silicon Controlled Rectifier, 5590 A, 3800 V, SCR, 101A325, 3 PIN

与N1463DZ36GOO相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

31
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

22
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

51
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

50

产品中心

服务支持

精选活动

关于我们

帮助中心

N1463DZ36GOO

N1463DZ36GOO 数据手册

与N1463DZ36GOO相关器件

与N1463DZ36GOO相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

N1463DZ36GOO

N1463DZ36GOO 数据手册

与N1463DZ36GOO相关器件

与N1463DZ36GOO相关文章

您还可以找

您在本页遇到什么问题？