Datasheet > N08M1618L1AW

N08M1618L1AW

更新时间： 2024-11-29 03:47:39

品牌	Logo	应用领域
AMI		医疗静态存储器
页数	文件大小	规格书
11页	196K
描述
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K 】 16 bit

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N08M1618L1AW 数据手册

AMI Semiconductor, Inc.

ULP Memory Solutions

N08M1618L1A

670 North McCarthy Blvd. Suite 220

Milpitas, CA 95035

Advance Information

PH: 408-935-7777, FAX: 408-935-7770

8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM

512K × 16 bit

Overview

Features

The N08M1618L1A is an integrated memory

device intended for non life-support medical

applications. This device is a 8 megabit memory

organized as 524,288 words by 16 bits. The device

is designed and fabricated using AMI

• Dual voltage for Optimum Performance:

Vccq - 2.3 to 3.6 Volts

Vcc - 1.4 to 2.2 Volts

• Very low standby current

0.5µA at 1.8V and 37 deg C

Semiconductor’s advanced CMOS technology with

reliability inhancements for medical users. The

device operates with two chip enable (CE1 and

CE2) controls and output enable (OE) to allow for

easy memory expansion. Byte controls (UB and

LB) allow the upper and lower bytes to be

• Very low operating current

1.0mA at 1.8V and 1µs (Typical)

• Very low Page Mode operating current

0.5mA at 1.8V and 1µs (Typical)

• Simple memory control

accessed independently and can also be used to

deselect the device. This device is optimal for

various applications where low-power is critical

such as battery backup and hand-held devices.

The device can operate over a very wide

Dual Chip Enables (CE1 and CE2)

Byte control for independent byte operation

Output Enable (OE) for memory expansion

• Low voltage data retention

Vcc = 1.2V

temperature range of -40 C to +85 C and is

• Special Processing to reduce Soft Error Rate

available in a JEDEC standard BGA package.

(SER)

• Automatic power down to standby mode

Product Family

Standby

Operating

Current (Icc),

Max

Operating

Power

Current (I_SB),

Part Number

N08M1618L1AB

N08M1618L1AW

Package Type

48 - BGA

Wafer

Speed

Temperature

Supply

Max

2.3V-3.6V(V_CCQ

1.4V-2.2V(V_CC) 150ns @ 1.4V

)

85ns @ 1.7V

2.5 mA @

1MHz

-40^oC to +85^oC

20 µA

Pin Configuration

Pin Descriptions

A₀

A₃

A₂

Pin Name

A₀-A₁₈

CE1, CE2

I/O₀-I/O₁₅

Pin Function

A₁

A₄

A₆

A₇

CE2

Address Inputs

Write Enable Input

Chip Enable Input

I/O₈

I/O₀

CE1

I/O₉I/O₁₀A₅

V_SSI/O₁₁A₁₇

I/O₁I/O₂

I/O₃V_CC

Output Enable Input

Lower Byte Enable Input

Upper Byte Enable Input

Data Inputs/Outputs

V_CCQI/O₁₂

I/O₁₄I/O₁₃A₁₄

A₁₆I/O₄V_SS

A₁₅I/O₅I/O₆

I/O₁₅

A₁₈

A₁₂

A₉

A₁₃

A₁₀

I/O₇

A₈

A₁₁

V_CC

V_SS

Power

Ground

48 Pin BGA (top)

8 x 10 mm

V_CCQ

Power I/O pins only

Not Connected

Stock No. 23211-03 9/21/06

ADVANCE INFORMATION

The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com.

12 3 4 5 6 7...11

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与N08M1618L1AW相关器件

型号	品牌	获取价格	描述	数据表
N08M163WL1A	NANOAMP	获取价格	8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512Kx16 bit
N08M163WL1AB	NANOAMP	获取价格	8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512Kx16 bit
N08M163WL1AB-70I	NANOAMP	获取价格	8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512Kx16 bit
N08M163WL1AB-70I-TR	NANOAMP	获取价格	Standard SRAM, 512KX16, 70ns, CMOS, PBGA48
N08M163WL1AD	NANOAMP	获取价格	8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512Kx16 bit
N08M163WL1AD-70I	NANOAMP	获取价格	8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512Kx16 bit
N08SP003L	YAGEO	获取价格	负温度系数热敏电阻
N08SP003M	KEMET	获取价格	KEMET, SP, NTC Thermistors, Surge Protection
N08SP003M	YAGEO	获取价格	负温度系数热敏电阻
N08SP004L	YAGEO	获取价格	负温度系数热敏电阻

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