Datasheet > N08T1630C1BT2

N08T1630C1BT2

更新时间： 2024-11-27 03:47:39

品牌	Logo	应用领域
NANOAMP		静态存储器
页数	文件大小	规格书
9页	254K
描述
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512Kx16 bit

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N08T1630C1BT2 数据手册

NanoAmp Solutions, Inc.

670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035

ph: 408-935-7777, FAX: 408-935-7770

www.nanoamp.com

N08T1630CxB

8Mb Ultra-Low Power Asynchronous CMOS SRAM

512Kx16 bit

Overview

Features

The N08T1630CxB is an integrated memory

device containing a low power 8 Mbit SRAM built

using a self-refresh DRAM array organized as

512,288 words by 16 bits. It is designed to be

identical in operation and interface to standard 6T

SRAMS. The device is designed for low standby

and operating current and includes a power-down

feature to automatically enter standby mode. The

device operates with two chip enable (CE1 and

CE2) controls and output enable (OE) to allow for

easy memory expansion. Byte controls (UB and

LB) allow the upper and lower bytes to be

• Single Wide Power Supply Range

2.7 to 3.6 Volts

• Very low standby current

70µA at 3.0V (Max)

• Very low operating current

2.0mA at 3.0V and 1µs (Typical)

• Simple memory control

Dual Chip Enables (CE1 and CE2)

Byte control for independent byte operation

Output Enable (OE) for memory expansion

accessed independently and can also be used to

deselect the device. The N08T1630CxB is optimal

for various applications where low-power is critical

such as battery backup and hand-held devices.

The device can operate over a very wide

• Very fast access time

55ns address access option

30ns OE access time

• Automatic power down to standby mode

• TTL compatible three-state output driver

• Green package option for TSOP and BGA

temperature range of -40 C to +85 C and is

available in JEDEC standard BGA and TSOP2

packages compatible with other standard 512Kb x

16 SRAMs.

Product Family

Standby

Operating

Current (Icc),

Max

Operating

Power

Current (I_SB),

Part Number

Package Type

Speed

Temperature

Supply (Vcc)

Max @ 3.0V

N08T1630C2BZ

N08T1630C2BZ2

N08T1630C1BT

48 - BGA

Green 48 - BGA

44- TSOP2

55/70ns @

2.7V

-40^oC to +85^oC

2.7V - 3.6V

70 µA

3 mA @ 1MHz

N08T1630C1BT2 Green 44- TSOP2

Pin Configuration (Top View)

Pin Descriptions

A₀

A₃

A₁

A₄

A₂

Pin Name

A₀-A₁₈

CE1

CE2

I/O₀-I/O₁₅

Pin Function

CE2

Address Inputs

Write Enable Input

Chip Enable 1 Input

I/O₈

I/O₀

CE1

I/O₉I/O₁₀A₅

V_SSI/O₁₁A₁₇

A₆

A₇

I/O₁I/O₂

I/O₃V_CC

I/O0

I/O1

I/O2

I/O3

VCC

VSS

I/O4

I/O5

I/O6

I/O7

A18

A17

A16

A15

A14

I/O15

I/O14

I/O13

I/O12

VSS

VCC

I/O11

I/O10

I/O9

I/O8

Chip Enable 2 Input (BGA only)

Output Enable Input

44 Pin

TSOP2

V_CCI/O₁₂V_SSA₁₆I/O₄V_SS

I/O₁₄I/O₁₃A₁₄A₁₅I/O₅I/O₆

Lower Byte Enable Input

Upper Byte Enable Input

Data Inputs/Outputs

I/O₁₅

A₁₈

A₁₂

A₉

A₁₃

A₁₀

I/O₇

A₈

A₁₁

V_CC

V_SS

Power

Ground

Not Connected

A10

A11

48 Ball BGA

6 x 8 mm

A12

A₁₃

(DOC# 14-02-004 REV H ECN# 01-1102)

The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.

12 3 4 5 6 7...9

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与N08T1630C1BT2相关器件

型号	品牌	获取价格	描述	数据表
N08T1630C1BT2-55	NANOAMP	获取价格	8Mb Ultra-Low Power Asynchronous CMOS SRAM 512Kx16 bit
N08T1630C1BT2-55I	NANOAMP	获取价格	Standard SRAM, 512KX16, 55ns, CMOS, PDSO44
N08T1630C1BT2-70	NANOAMP	获取价格	8Mb Ultra-Low Power Asynchronous CMOS SRAM 512Kx16 bit
N08T1630C1BT2-70I	NANOAMP	获取价格	Standard SRAM, 512KX16, 70ns, CMOS, PDSO44
N08T1630C1BT-55	NANOAMP	获取价格	8Mb Ultra-Low Power Asynchronous CMOS SRAM 512Kx16 bit
N08T1630C1BT-55I	NANOAMP	获取价格	Standard SRAM, 512KX16, 55ns, CMOS, PDSO44
N08T1630C1BT-70	NANOAMP	获取价格	8Mb Ultra-Low Power Asynchronous CMOS SRAM 512Kx16 bit
N08T1630C1BT-70I	NANOAMP	获取价格	Standard SRAM, 512KX16, 70ns, CMOS, PDSO44
N08T1630C1BZ2-55	NANOAMP	获取价格	8Mb Ultra-Low Power Asynchronous CMOS SRAM 512Kx16 bit
N08T1630C1BZ2-70	NANOAMP	获取价格	8Mb Ultra-Low Power Asynchronous CMOS SRAM 512Kx16 bit

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