Datasheet > 存储 > SRAM> N08M163WL1AB-70I-TR

N08M163WL1AB-70I-TR

更新时间： 2024-11-29 13:11:55

品牌	Logo	应用领域
NANOAMP		医疗静态存储器
页数	文件大小	规格书
8页	235K
描述
Standard SRAM, 512KX16, 70ns, CMOS, PBGA48

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N08M163WL1AB-70I-TR 技术参数

是否Rohs认证：	不符合	生命周期：	Contact Manufacturer
包装说明：	FBGA, BGA48,6X8,30	Reach Compliance Code：	unknown
风险等级：	5.88	Is Samacsys：	N
最长访问时间：	70 ns	I/O 类型：	COMMON
JESD-30 代码：	R-PBGA-B48	内存密度：	8388608 bit
内存集成电路类型：	STANDARD SRAM	内存宽度：	16
端子数量：	48	字数：	524288 words
字数代码：	512000	工作模式：	ASYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	512KX16	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	FBGA
封装等效代码：	BGA48,6X8,30	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, FINE PITCH	并行/串行：	PARALLEL
电源：	3/3.3 V	认证状态：	Not Qualified
最小待机电流：	1.8 V	子类别：	SRAMs
最大压摆率：	0.012 mA	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子形式：	BALL	端子节距：	0.75 mm
端子位置：	BOTTOM	Base Number Matches：	1

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NanoAmp Solutions, Inc.

670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035

ph: 408-935-7777, FAX: 408-935-7770

www.nanoamp.com

N08M163WL1A

8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM

512Kx16 bit

Overview

Features

The N08M163WL1A is an integrated memory

device intended for non life-support (Class 1 or

2) medical applications. This device is a 4

megabit memory organized as 524,288 words by

16 bits. The device is designed and fabricated

using NanoAmp’s advanced CMOS technology

with reliability inhancements for medical users. The

base design is the same as NanoAmp’s

• Single Wide Power Supply Range

2.3 to 3.6 Volts

• Very low standby current

4.0µA at 3.0V (Typical)

• Very low operating current

2.0mA at 3.0V and 1µs (Typical)

• Very low Page Mode operating current

N08M1618L2A, which has further reliability

processing for life-support (Class 3) medical

applications. The device operates with two chip

enable (CE1 and CE2) controls and output enable

(OE) to allow for easy memory expansion. Byte

controls (UB and LB) allow the upper and lower

bytes to be accessed independently and can also

be used to deselect the device. This device is

optimal for various applications where low-power is

critical such as battery backup and hand-held

devices. The device can operate over a very wide

1.0mA at 3.0V and 1µs (Typical)

• Simple memory control

Dual Chip Enables (CE1 and CE2)

Byte control for independent byte operation

Output Enable (OE) for memory expansion

• Low voltage data retention

Vcc = 1.8V

• Special processing for Soft Error Rate (SER)

reduction

• Automatic power down to standby mode

temperature range of -40 C to +85 C and is

• Compact space saving BGA package avail-

available in a JEDEC standard BGA package

able

Product Family

Standby

Operating

Current (Icc),

Max

Operating

Power

Current (I_SB),

Part Number

Package Type

Speed

Temperature

Supply (Vcc)

Max

N08M163WL1AB

48 - BGA

70ns @ 2.7V

100ns @ 2.3V

-40^oC to +85^oC

2.3V - 3.6V

20 µA

3 mA @ 1MHz

N08M163WL1AD Known Good Die

Pin Configurations

Pin Descriptions

A₀

A₃

A₂

Pin Name

A₀-A₁₈

CE1, CE2

I/O₀-I/O₁₅

Pin Function

A₁

A₄

A₆

A₇

CE2

Address Inputs

Write Enable Input

Chip Enable Input

I/O₈

I/O₀

CE1

I/O₉I/O₁₀A₅

V_SSI/O₁₁A₁₇

I/O₁I/O₂

I/O₃V_CC

Output Enable Input

Lower Byte Enable Input

Upper Byte Enable Input

Data Inputs/Outputs

V_CCI/O₁₂

I/O₁₄I/O₁₃A₁₄

A₁₆I/O₄V_SS

A₁₅I/O₅I/O₆

I/O₁₅

A₁₈

A₁₂

A₉

A₁₃

A₁₀

I/O₇

A₈

A₁₁

V_CC

V_SS

Power

Ground

Not Connected

48 Pin BGA (top)

8 x 10 mm

Stock No. 23319-01 11/01/02

The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.

12 3 4 5 6 7 8

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与N08M163WL1AB-70I-TR相关器件

型号	品牌	获取价格	描述	数据表
N08M163WL1AD	NANOAMP	获取价格	8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512Kx16 bit
N08M163WL1AD-70I	NANOAMP	获取价格	8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512Kx16 bit
N08SP003L	YAGEO	获取价格	负温度系数热敏电阻
N08SP003M	KEMET	获取价格	KEMET, SP, NTC Thermistors, Surge Protection
N08SP003M	YAGEO	获取价格	负温度系数热敏电阻
N08SP004L	YAGEO	获取价格	负温度系数热敏电阻
N08SP004M	YAGEO	获取价格	负温度系数热敏电阻
N08SP005L	YAGEO	获取价格	负温度系数热敏电阻
N08SP005M	YAGEO	获取价格	负温度系数热敏电阻
N08SP006L	YAGEO	获取价格	负温度系数热敏电阻

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