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N01S830HAT22IT PDF预览

N01S830HAT22IT

更新时间: 2024-02-08 09:27:51
品牌 Logo 应用领域
安森美 - ONSEMI 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
13页 99K
描述
1 Mb Ultra-Low Power Serial SRAM

N01S830HAT22IT 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:TSSOP-8Reach Compliance Code:compliant
Factory Lead Time:96 weeks风险等级:5.77
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.4 mm内存密度:1048576 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
湿度敏感等级:3功能数量:1
端子数量:8字数:131072 words
字数代码:128000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:SERIAL
座面最大高度:1.1 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin (Sn)端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
宽度:3 mmBase Number Matches:1

N01S830HAT22IT 数据手册

 浏览型号N01S830HAT22IT的Datasheet PDF文件第1页浏览型号N01S830HAT22IT的Datasheet PDF文件第3页浏览型号N01S830HAT22IT的Datasheet PDF文件第4页浏览型号N01S830HAT22IT的Datasheet PDF文件第5页浏览型号N01S830HAT22IT的Datasheet PDF文件第6页浏览型号N01S830HAT22IT的Datasheet PDF文件第7页 
N01S830HA, N01S830BA  
Table 1. DEVICE OPTIONS  
Device / Part Number  
Temperature  
Range  
Power Supply  
Speed  
Package  
Function  
N01S830HAT22  
HV 2.5 V − 5.5 V  
20 MHz for I−Temp,  
16 MHz E−Temp  
TSSOP−8  
I, E  
HOLD  
N01S830BAT22  
HV 2.5 V − 5.5 V  
20 MHz for I−Temp,  
16 MHz E−Temp  
TSSOP−8  
I, E  
BBU − Battery Back-up  
Table 2. PIN NAMES  
Pin Name  
Pin Function  
CS  
Chip Select  
Serial Clock  
SCK  
SI / SIO0  
Data Input − SPI mode  
Data Input/Output 0 − DUAL and QUAD mode  
SO / SIO1  
NC / SIO2  
HOLD / SIO3  
Data Output − SPI mode  
Data Input/Output 1 − DUAL and QUAD mode  
No Connect − SPI and DUAL mode  
Data Input/Output 2 − QUAD mode  
HOLD Version  
HOLD Input − SPI and DUAL mode  
Data Input/Output 3 − QUAD mode  
VBAT  
BBU Version  
Battery Supply − SPI and DUAL mode  
V
V
Power  
CC  
Ground  
SS  
Decode  
Logic  
SCK  
CS  
Interface  
Circuitry  
Control  
Logic  
SRAM  
Array  
SI / SIO0  
SO / SIO1  
Data Flow  
Circuitry  
SIO2  
HOLD / SIO3  
(HOLD Version)  
Battery Controls  
VBAT  
(BBU Version)  
Figure 1. Functional Block Diagram  
Table 3. CONTROL SIGNAL DESCRIPTIONS  
Mode  
Used  
Signal  
Name  
Description  
CS  
All  
Chip Select  
A low level selects the device and a high level puts the device in standby mode. If CS is brought  
high during a program cycle, the cycle will complete and then the device will enter standby mode.  
When CS is high, SO is in high-Z. CS must be driven low after power-up prior to any sequence  
being started.  
SCK  
All  
Serial Clock  
Synchronizes all activities between the memory and controller. All incoming addresses, data and  
instructions are latched on the rising edge of SCK. Data out is updated after the falling edge of  
SCK.  
SI  
SPI  
SPI  
Serial Data In  
Receives instructions, addresses and data on the rising edge of SCK.  
SO  
Serial Data Out Data is transferred out after the falling edge of SCK.  
www.onsemi.com  
2
 

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