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N01S830HAT22IT PDF预览

N01S830HAT22IT

更新时间: 2024-01-18 12:13:18
品牌 Logo 应用领域
安森美 - ONSEMI 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
13页 99K
描述
1 Mb Ultra-Low Power Serial SRAM

N01S830HAT22IT 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:TSSOP-8Reach Compliance Code:compliant
Factory Lead Time:96 weeks风险等级:5.77
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.4 mm内存密度:1048576 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
湿度敏感等级:3功能数量:1
端子数量:8字数:131072 words
字数代码:128000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:SERIAL
座面最大高度:1.1 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin (Sn)端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
宽度:3 mmBase Number Matches:1

N01S830HAT22IT 数据手册

 浏览型号N01S830HAT22IT的Datasheet PDF文件第7页浏览型号N01S830HAT22IT的Datasheet PDF文件第8页浏览型号N01S830HAT22IT的Datasheet PDF文件第9页浏览型号N01S830HAT22IT的Datasheet PDF文件第10页浏览型号N01S830HAT22IT的Datasheet PDF文件第11页浏览型号N01S830HAT22IT的Datasheet PDF文件第12页 
N01S830HA, N01S830BA  
PACKAGE DIMENSIONS  
TSSOP8 3x4.4 / TSSOP8 (225 mil)  
CASE 948BH  
ISSUE O  
ON Semiconductor and the  
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N01S830HA/D  

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