是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | R-PDSO-C2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.39 | 最大击穿电压: | 44.2 V |
最小击穿电压: | 40 V | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE |
JEDEC-95代码: | DO-214AA | JESD-30 代码: | R-PDSO-C2 |
JESD-609代码: | e3 | 最大非重复峰值反向功率耗散: | 600 W |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性: | BIDIRECTIONAL | 最大功率耗散: | 1.38 W |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 36 V |
表面贴装: | YES | 技术: | AVALANCHE |
端子面层: | MATTE TIN | 端子形式: | J BEND |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MXSMBJ36CAE3TR | MICROSEMI |
获取价格 |
600W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2 | |
MXSMBJ36CATR | MICROSEMI |
获取价格 |
600W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMBJ, 2 PIN | |
MXSMBJ36CATRE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 36V V(RWM), Bidirectional, 1 Element, Silicon, DO-21 | |
MXSMBJ36CE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 36V V(RWM), Bidirectional, 1 Element, Silicon, DO-21 | |
MXSMBJ36CTR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 36V V(RWM), Bidirectional, 1 Element, Silicon, DO-21 | |
MXSMBJ36E3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 36V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 | |
MXSMBJ40/TR13 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 40V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 | |
MXSMBJ40/TR7 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 40V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 | |
MXSMBJ40A | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 40V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 | |
MXSMBJ40A/TR7 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 40V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 |