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MXSMBJ40AE3 PDF预览

MXSMBJ40AE3

更新时间: 2024-09-27 14:03:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
7页 563K
描述
Trans Voltage Suppressor Diode, 600W, 40V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2

MXSMBJ40AE3 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:DO-214AA
包装说明:R-PDSO-C2针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.3
Is Samacsys:N最大击穿电压:49.1 V
最小击穿电压:44.4 V击穿电压标称值:46.75 V
最大钳位电压:64.5 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:600 W元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
最大功率耗散:1.38 W认证状态:Not Qualified
参考标准:MIL-19500最大重复峰值反向电压:40 V
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子面层:Matte Tin (Sn) - annealed
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

MXSMBJ40AE3 数据手册

 浏览型号MXSMBJ40AE3的Datasheet PDF文件第2页浏览型号MXSMBJ40AE3的Datasheet PDF文件第3页浏览型号MXSMBJ40AE3的Datasheet PDF文件第4页浏览型号MXSMBJ40AE3的Datasheet PDF文件第5页浏览型号MXSMBJ40AE3的Datasheet PDF文件第6页浏览型号MXSMBJ40AE3的Datasheet PDF文件第7页 

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MXSMBJ40AE3/TR MICROSEMI

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Trans Voltage Suppressor Diode, 600W, 40V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXSMBJ40AE3TR MICROSEMI

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600W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2
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Trans Voltage Suppressor Diode, 600W, 40V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
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Trans Voltage Suppressor Diode, 600W, 40V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
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Trans Voltage Suppressor Diode, 600W, 40V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MXSMBJ40CAE3 MICROSEMI

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Trans Voltage Suppressor Diode, 600W, 40V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MXSMBJ40CAE3TR MICROSEMI

获取价格

600W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2