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MXRT100KP400ATRE3 PDF预览

MXRT100KP400ATRE3

更新时间： 2024-11-23 18:24:11
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
4页 132K
描述
Trans Voltage Suppressor Diode, 100000W, 400V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2

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MXRT100KP400ATRE3 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：O-PALF-W2
针数：2Reach Compliance Code：unknown
风险等级：5.26最大击穿电压：492 V
最小击穿电压：444 V外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码：O-PALF-W2
JESD-609代码：e3最大非重复峰值反向功率耗散：100000 W
元件数量：1端子数量：2
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
极性：UNIDIRECTIONAL最大功率耗散：1.61 W
认证状态：Not Qualified参考标准：MIL-19500
最大重复峰值反向电压：400 V表面贴装：NO
技术：AVALANCHE端子面层：MATTE TIN
端子形式：WIRE端子位置：AXIAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

MXRT100KP400ATRE3 数据手册

 浏览型号MXRT100KP400ATRE3的Datasheet PDF文件第2页浏览型号MXRT100KP400ATRE3的Datasheet PDF文件第3页浏览型号MXRT100KP400ATRE3的Datasheet PDF文件第4页 
RT100KP33A thru RT100KP400CA, e3  
Preferred 100 kW Transient Voltage  
Suppressor for AIRCRAFT POWER  
BUS PROTECTION  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
Microsemi’s 100 kW Transient Voltage Suppressors (TVSs) are designed  
for aircraft applications requiring high power transient protection with a  
comparatively small axial-leaded package size. This includes various  
threats such as “Waveform 4” at 6.4/69 µs per RTCA/DO-160E Section 22.  
It is also available with screening in accordance with MIL-PRF-19500 or  
avionics screening as described in the Features section herein. It may also  
be optionally acquired with RoHS Compliant (annealed matte-Tin finish)  
with an e3 suffix added to the part number. Microsemi also offers a broad  
spectrum of other TVSs to meet your needs.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
Available in both Unidirectional and Bidirectional  
construction (Bidirectional with CA suffix)  
•
Protection from high power switching transients,  
induced RF, and lightning threats with comparatively  
small package size (0.25 inch diameter)  
•
•
•
•
TVS selection for 33 to 400 V Standoff Voltages (VWM  
Suppresses transients up to 100 kW @ 6.4/69 μs  
Fast response with less than 5 ns turn-on time.  
)
•
•
•
Protection from ESD and EFT per IEC61000-4-2 and  
IEC61000-4-4  
Pin injection protection per RTCA/DO-160E up to  
Level 4 for Waveform 4 (6.4/69 µs) on all devices  
Optional 100% screening for avionics grade is available  
by adding MA prefix to part number for added 100%  
temperature cycle -55oC to +125oC (10X), surge (3X) in  
each direction, 24 hours HTRB in each direction, and post  
test (VBR and ID)  
Pin injection protection per RTCA/DO-160E up to  
Level 5 for Waveform 4 (6.4/69 µs) on device types  
RT100KP33A or CA up to RT100KP260A or CA  
•
•
Pin injection protection per RTCA/DO-160E up to  
Level 3 for Waveform 5A (40/120 µs) on all devices  
•
Options for screening in accordance with MIL-PRF-19500  
for JAN, JANTX, and JANTXV are also available by adding  
MQ, MX, or MV prefixes respectively to part numbers.  
Pin injection protection per RTCA/DO-160E up to  
Level 4 for Waveform 5A (40/120 µs) on device types  
RT100KP33A or CA up to RT100KP64A or CA  
•
•
Moisture classification is Level 1 with no dry pack required  
per IPC/JEDEC J-STD-020B.  
•
Consult Factory for other voltages with similar Peak  
Pulse Power capabilities.  
RoHS Compliant devices available by adding “e3” suffix  
MAXIMUM RATINGS  
MECHANICAL & PACKAGING  
•
Peak Pulse Power dissipation at 25ºC: 100 kW at 6.4/69 µs  
waveform in Figure 8 (also see figures 1 and 2)  
•
•
•
CASE: Void free transfer molded thermosetting  
epoxy meeting UL94V-O requirements  
FINISH: Tin-Lead or RoHS Compliant matte-Tin  
plating solderable per MIL-STD-750, method 2026  
Polarity: Cathode marked with band for  
•
•
Impulse repetition rate: 0.005%  
tclamping (0 volts to VBR min): <100 ps theoretical for  
unidirectional and <5 ns for bidirectional  
Operating & storage temperatures: -65oC to +150oC  
unidirectional (no band required for bi-directional)  
•
•
•
MARKING: Manufacturers logo and part number.  
Add prefix MA, MQ, MX, etc., for screened parts.  
Thermal resistance: 17.5C/W junction to lead, or 77.5C/W  
junction to ambient when mounted on FR4 PC board with 4  
mm2 copper pads (1 oz ) and track width 1 mm, length 25  
mm  
Steady-state power dissipation: 7 Watts @ TL = 27.5oC or  
1.61 Watts at TA =25 oC when mounted on FR4 PC Board  
described for thermal resistance above  
•
•
WEIGHT: 1.7 grams (approximate)  
TAPE & REEL option: Standard per EIA-296 for  
axial package (add “TR” suffix to part number)  
•
•
Package dimensions: See last page  
•
•
Forward surge: 250 Amps 8.3 ms half-sine wave for  
unidirectional devices only  
Solder Temperatures: 260oC for 10 s maximum  
Copyright © 2007  
10-03-2007 Rev B  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
1234

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 		Trans Voltage Suppressor Diode, 100000W, 400V V(RWM), Bidirectional, 1 Element, Silicon, R
MXRT100KP400CATR MICROSEMI

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MXRT100KP400CATRE3 MICROSEMI

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MXRT100KP40A/TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 100000W, 40V V(RWM), Unidirectional, 1 Element, Silicon, R
MXRT100KP40ATR MICROSEMI

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 		100000W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC PACKAGE-2
MXRT100KP40ATRE3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 100000W, 40V V(RWM), Unidirectional, 1 Element, Silicon, R
MXRT100KP40CAE3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 100000W, 40V V(RWM), Bidirectional, 1 Element, Silicon, RO

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