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MXRT100KP40AE3 PDF预览

MXRT100KP40AE3

更新时间: 2024-11-19 20:40:15
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
7页 427K
描述
Trans Voltage Suppressor Diode, 100000W, 40V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-2

MXRT100KP40AE3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:O-PALF-W2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.33最大击穿电压:49.1 V
最小击穿电压:44.4 V外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:O-PALF-W2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:100000 W元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:1.61 W认证状态:Not Qualified
参考标准:MIL-19500最大重复峰值反向电压:40 V
表面贴装:NO技术:AVALANCHE
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MXRT100KP40AE3 数据手册

 浏览型号MXRT100KP40AE3的Datasheet PDF文件第2页浏览型号MXRT100KP40AE3的Datasheet PDF文件第3页浏览型号MXRT100KP40AE3的Datasheet PDF文件第4页浏览型号MXRT100KP40AE3的Datasheet PDF文件第5页浏览型号MXRT100KP40AE3的Datasheet PDF文件第6页浏览型号MXRT100KP40AE3的Datasheet PDF文件第7页 

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