是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | O-PALF-W2 |
针数: | 2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.33 | 最大击穿电压: | 492 V |
最小击穿电压: | 444 V | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE | JESD-30 代码: | O-PALF-W2 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
最大非重复峰值反向功率耗散: | 100000 W | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | LONG FORM |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性: | BIDIRECTIONAL |
最大功率耗散: | 1.61 W | 认证状态: | Not Qualified |
参考标准: | MIL-19500 | 最大重复峰值反向电压: | 400 V |
表面贴装: | NO | 技术: | AVALANCHE |
端子面层: | Matte Tin (Sn) | 端子形式: | WIRE |
端子位置: | AXIAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MXRT100KP400CATR | MICROSEMI |
获取价格 |
100000W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 5A, 2 PIN | |
MXRT100KP400CATRE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 100000W, 400V V(RWM), Bidirectional, 1 Element, Silicon, R | |
MXRT100KP40A/TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 100000W, 40V V(RWM), Unidirectional, 1 Element, Silicon, P | |
MXRT100KP40AE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 100000W, 40V V(RWM), Unidirectional, 1 Element, Silicon, R | |
MXRT100KP40ATR | MICROSEMI |
获取价格 |
100000W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC PACKAGE-2 | |
MXRT100KP40ATRE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 100000W, 40V V(RWM), Unidirectional, 1 Element, Silicon, R | |
MXRT100KP40CAE3 | MICROSEMI |
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Trans Voltage Suppressor Diode, 100000W, 40V V(RWM), Bidirectional, 1 Element, Silicon, RO | |
MXRT100KP40CAE3/TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 100000W, 40V V(RWM), Bidirectional, 1 Element, Silicon, RO | |
MXRT100KP40CAE3TR | MICROSEMI |
获取价格 |
100000W, BIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC, CASE 5A, 2 PIN | |
MXRT100KP40CATR | MICROSEMI |
获取价格 |
100000W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC PACKAGE-2 |