Datasheet > 二极管 > 瞬态抑制器> MXRT100KP300CATR

MXRT100KP300CATR

更新时间： 2024-11-24 04:52:39

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管电视瞬态抑制器
页数	文件大小	规格书
5页	260K
描述
100000W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC PACKAGE-2

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中文翻译

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数据手册

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MXRT100KP300CATR 数据手册

TECHNICAL DATA SHEET

Gort Road Business Park, Ennis, Co. Clare, Ireland.

Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298

6 Lake Street, Lawrence, MA 01841

Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803

Website: http://www.microsemi.com

- High Reliability controlled devices

Unidirectional and Bidirectional

Transient Voltage Suppressor

- Economical series for thru hole mounting

- Unidirectional (A) and Bidirectional (CA) construction

- Selections for 40 to 400 V standoff voltages (VWM)

LEVELS

M, MA, MX, MXL

DEVICES

MRT100KP40A thru MRT100KP400CA, e3

FEATURES

High reliability controlled devices with wafer fabrication and assembly lot traceability

100 % surge tested devices

Suppresses transients up to 100 kW @ 6.4/69 µs

Fast response with less than 5ns turn-on time

Preferred 100kW TVS for aircraft power bus protection

Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes

specify various screening and conformance inspection options based on MIL-PRF-19500.

Refer to MicroNote 129 for more details on the screening options.

Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B

RoHS Compliant devices available by adding “e3” suffix

3σ lot norm screening performed on Standby Current I_D

CASE 5A

APPLICATIONS / BENEFITS

Protection from high power switching transients, induced RF, and lightning threats with

comparatively small package size (0.25 inch diameter)

Protection from ESD and EFT per IEC61000-4-2 and IEC61000-4-4

Pin injection protection per RTCA/DO-160E up to Level 4 for Waveform 4 (6.4/69 µs) on all

devices

Pin injection protection per RTCA/DO-160E up to Level 5 for Waveform 4 (6.4/69 µs) on device

types MRT100KP33A or CA up to MRT100KP260A or CA

Pin injection protection per RTCA/DO-160E up to Level 3 for Waveform 5A (40/120 µs) on all

devices

Pin injection protection per RTCA/DO-160E up to Level 4 for Waveform 5A (40/120 µs) on

device types MRT100KP33A or CA up to MRT100KP64A or CA

Consult Factory for other voltages with similar Peak Pulse Power capabilities

MAXIMUM RATINGS

Peak Pulse Power dissipation at 25 ºC: 100 kW at @ 6.4/69 µs in Figure 8 (also see Figures 1

and 2)

impulse repetition rate (duty factor) of 0.005 %

t_clamping(0 volts to V_BRmin.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional

Operating and Storage temperature: -65 ^ºC to +150 °C

Thermal Resistance: 17.5 °C/W junction to lead, or 77.5 °C/W junction to ambient when

mounted on FR4 PC board with 4 mm²copper pads (1 oz ) and track width 1 mm, length 25

Steady-state power dissipation: 7 Watts @ T_L= 27.5 °C or 1.61 Watts at T_A= 25 °C when

mounted on FR4 PC Board described above for thermal resistance

Forward surge: 250 Amps 8.3 ms half-sine wave for unidirectional devices only

Solder temperatures: 260 °C for 10 s (maximum)

RF01012 Rev A, August 2010

High Reliability Product Group

Page 1 of 5

12 3 4 5

中文翻译

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与MXRT100KP300CATR相关器件

型号	品牌	获取价格	描述	数据表
MXRT100KP300CATRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 100000W, 300V V(RWM), Bidirectional, 1 Element, Silicon, R
MXRT100KP33	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 100000W, 33V V(RWM), Unidirectional, 1 Element, Silicon, P
MXRT100KP33AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 100000W, 33V V(RWM), Unidirectional, 1 Element, Silicon, R
MXRT100KP33AE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 100000W, 33V V(RWM), Unidirectional, 1 Element, Silicon, R
MXRT100KP33ATR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 100000W, 33V V(RWM), Unidirectional, 1 Element, Silicon, P
MXRT100KP33C	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 100000W, 33V V(RWM), Bidirectional, 1 Element, Silicon, PL
MXRT100KP33CAE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 100000W, 33V V(RWM), Bidirectional, 1 Element, Silicon, RO
MXRT100KP33CAE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 100000W, 33V V(RWM), Bidirectional, 1 Element, Silicon, RO
MXRT100KP33CE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 100000W, 33V V(RWM), Bidirectional, 1 Element, Silicon, RO
MXRT100KP33CTR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 100000W, 33V V(RWM), Bidirectional, 1 Element, Silicon, PL

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