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MXRT100KP350CA PDF预览

MXRT100KP350CA

更新时间: 2024-11-19 20:40:15
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
7页 427K
描述
Trans Voltage Suppressor Diode, 100000W, 350V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC PACKAGE-2

MXRT100KP350CA 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active包装说明:O-PALF-W2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.51Is Samacsys:N
最大击穿电压:431 V最小击穿电压:389 V
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:O-PALF-W2JESD-609代码:e0
湿度敏感等级:1最大非重复峰值反向功率耗散:100000 W
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:BIDIRECTIONAL最大功率耗散:1.61 W
认证状态:Not Qualified参考标准:MIL-19500
最大重复峰值反向电压:350 V表面贴装:NO
技术:AVALANCHE端子面层:Tin/Lead (Sn/Pb)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MXRT100KP350CA 数据手册

 浏览型号MXRT100KP350CA的Datasheet PDF文件第2页浏览型号MXRT100KP350CA的Datasheet PDF文件第3页浏览型号MXRT100KP350CA的Datasheet PDF文件第4页浏览型号MXRT100KP350CA的Datasheet PDF文件第5页浏览型号MXRT100KP350CA的Datasheet PDF文件第6页浏览型号MXRT100KP350CA的Datasheet PDF文件第7页 

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