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MXPLAD15KP15E3TR PDF预览

MXPLAD15KP15E3TR

更新时间： 2024-11-05 20:05:47
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
5页 215K
描述
Trans Voltage Suppressor Diode, 15000W, 15V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-1

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MXPLAD15KP15E3TR 技术参数

是否Rohs认证：符合生命周期：Obsolete
包装说明：ROHS COMPLIANT, PLASTIC PACKAGE-1针数：1
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.77
Is Samacsys：N最大击穿电压：20.4 V
最小击穿电压：16.7 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：S-PSSO-G1JESD-609代码：e3
湿度敏感等级：1最大非重复峰值反向功率耗散：15000 W
元件数量：1端子数量：1
封装主体材料：PLASTIC/EPOXY封装形状：SQUARE
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性：UNIDIRECTIONAL最大功率耗散：2.5 W
认证状态：Not Qualified最大重复峰值反向电压：15 V
表面贴装：YES技术：AVALANCHE
端子面层：MATTE TIN端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

MXPLAD15KP15E3TR 数据手册

 浏览型号MXPLAD15KP15E3TR的Datasheet PDF文件第2页浏览型号MXPLAD15KP15E3TR的Datasheet PDF文件第3页浏览型号MXPLAD15KP15E3TR的Datasheet PDF文件第4页浏览型号MXPLAD15KP15E3TR的Datasheet PDF文件第5页 
PLAD15KP5.0 thru PLAD15KP400CA, e3  
15,000 W SURFACE MOUNT TRANSIENT  
VOLTAGE SUPPRESSOR  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
These Microsemi 15 kW Transient Voltage Suppressors (TVSs)  
are designed for applications requiring protection of voltage-  
sensitive electronic devices that may be damaged by harsh or  
severe voltage transients including lightning per IEC61000-4-5 and  
classes with various source impedances described herein. This  
series is available in 5.0 to 400 volt standoff voltages (VWM) in both  
unidirectional and bidirectional offered in one surface mount  
device. Microsemi also offers numerous other TVS products to  
meet higher and lower power demands and special applications.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
Available in both Unidirectional and Bidirectional  
construction (Bidirectional with C or CA suffix)  
• Protection from switching transients and induced RF  
• Protection from ESD, and EFT per IEC 61000-4-2  
•
•
•
•
Low profile surface mount  
and IEC 61000-4-4  
Available in tape-and-reel or waffle pack  
Selections for 5.0 to 400 volts standoff voltages (VWM  
• Secondary lightning protection per IEC61000-4-5 with  
42 Ohms source impedance:  
Class 1,2,3,4: PLAD15KP5.0A to 400A or CA  
Class 5: PLAD15KP5.0A to 400A or CA  
)
Suppresses transients up to 15,000 watts @ 10/1000 µs  
(see Figure 1)  
• Secondary lightning protection per IEC61000-4-5 with  
•
•
Fast response  
12 Ohms source impedance:  
Optional 100% screening for avionics grade is  
available by adding MA prefix to part number for added  
100% temperature cycle -55oC to +125oC (10X) as well  
as surge (3X) and 24 hours HTRB with post test VZ &  
IR (in the operating direction for unidirectional or both  
directions for bidirectional)  
Class 1,2,3,4: PLAD15KP5.0A to 400A or CA  
• Secondary lightning protection per IEC61000-4-5 with  
2 Ohms source impedance:  
Class 2,3: PLAD15KP5.0A to 400A or CA  
Class 4: PLAD15KP5.0 to 54A or CA  
•
Options for screening in accordance with MIL-PRF-  
19500 for JAN, JANTX, and JANTXV are also available  
by adding MQ, MX, or MV prefixes respectively to part  
numbers.  
• Pin injection protection per RTCA/DO-160D for  
Waveform 4 (6.4/69 µs):  
Level 4: PLAD15KP5.0A to 400A or CA  
Level 5: PLAD15KP5.0A to 100A or CA  
•
•
Moisture classification is Level 1 with no dry pack  
required per IPC/JEDEC J-STD-020B  
• Pin injection protection per RTCA/DO-160D for  
Waveform 5A (40/120 µs):  
Level 4: PLAD15KP5.0A to 28A or CA  
RoHS compliant devices available by adding “e3” suffix  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
• Operating and Storage temperature: -55ºC to +150ºC  
•
•
CASE: Void-free transfer molded thermosetting  
epoxy body meeting UL94V-0  
• Peak Pulse Power dissipation at 25ºC: 15,000 watts at  
10/1000 μs (also see Figures 1 and 2)  
TERMINALS: Tin-Lead or RoHS Compliant  
annealed matte-Tin plating readily solderable per  
MIL-STD-750, method 2026  
• Impulse repetition rate (duty factor): 0.05%  
• tclamping (0 volts to V(BR) min.): < 100 ps theoretical for  
•
•
MARKING: Body marked with part number  
unidirectional and < 5 ns for bidirectional  
• Thermal resistance: 0.2 C/W junction to case or 50ºC/W  
junction to ambient when mounted on FR4 PC board with  
recommended mounting pad (see last page)  
POLARITY: For unidirectional devices, the cathode  
is on the metal backside (package bottom)  
•
•
WEIGHT: 1 gram (approximate)  
• Steady-State Power dissipation: 50 watts at TC = 100oC  
with good heat sink, or 2.5 watts at TA = 25ºC if mounted on  
FR4 PC board as described for thermal resistance  
TAPE & Reel: Standard per EIA-481-B (add “TR”  
suffix to part number)  
•
See package dimensions on last page  
• Forward Surge Voltage: 3.5 V maximum @ 500 Amps 8.3  
ms half-sine wave (unidirectional devices only)  
• Solder temperatures: 260 ºC for 10 s (maximum)  
Copyright © 2007  
10-12-2007 REV G  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
12345

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MXPLAD15KP160AE3TR MICROSEMI

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MXPLAD15KP160ATR MICROSEMI

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 		Trans Voltage Suppressor Diode, 15000W, 160V V(RWM), Unidirectional, 1 Element, Silicon, P
MXPLAD15KP160C MICROSEMI

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MXPLAD15KP160CAE3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 15000W, 160V V(RWM), Bidirectional, 1 Element, Silicon, RO
MXPLAD15KP160CAE3/TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 15000W, 160V V(RWM), Bidirectional, 1 Element, Silicon, RO
MXPLAD15KP160CATR MICROSEMI

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 		Trans Voltage Suppressor Diode, 15000W, 160V V(RWM), Bidirectional, 1 Element, Silicon, PL
MXPLAD15KP160CE3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 15000W, 160V V(RWM), Bidirectional, 1 Element, Silicon, RO
MXPLAD15KP160CE3TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 15000W, 160V V(RWM), Bidirectional, 1 Element, Silicon, RO

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