是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | R-PSSO-G1 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.4 | 其他特性: | HIGH RELIABILITY |
最大击穿电压: | 197 V | 最小击穿电压: | 178 V |
击穿电压标称值: | 187.5 V | 外壳连接: | CATHODE |
最大钳位电压: | 259 V | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE |
JESD-30 代码: | R-PSSO-G1 | 最大非重复峰值反向功率耗散: | 15000 W |
元件数量: | 1 | 端子数量: | 1 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性: | BIDIRECTIONAL | 最大功率耗散: | 2.5 W |
认证状态: | Not Qualified | 参考标准: | MIL-19500 |
最大重复峰值反向电压: | 160 V | 子类别: | Transient Suppressors |
表面贴装: | YES | 技术: | AVALANCHE |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MXPLAD15KP160CATR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 15000W, 160V V(RWM), Bidirectional, 1 Element, Silicon, PL | |
MXPLAD15KP160CE3 | MICROSEMI |
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Trans Voltage Suppressor Diode, 15000W, 160V V(RWM), Bidirectional, 1 Element, Silicon, RO | |
MXPLAD15KP160CE3TR | MICROSEMI |
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Trans Voltage Suppressor Diode, 15000W, 160V V(RWM), Bidirectional, 1 Element, Silicon, RO | |
MXPLAD15KP160CTR | MICROSEMI |
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暂无描述 | |
MXPLAD15KP160E3TR | MICROSEMI |
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暂无描述 | |
MXPLAD15KP160TR | MICROSEMI |
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Trans Voltage Suppressor Diode, 15000W, 160V V(RWM), Unidirectional, 1 Element, Silicon, P | |
MXPLAD15KP16A | MICROSEMI |
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Trans Voltage Suppressor Diode, 15000W, 16V V(RWM), Unidirectional, 1 Element, Silicon, PL | |
MXPLAD15KP16AE3 | MICROSEMI |
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Trans Voltage Suppressor Diode, 15000W, 16V V(RWM), Unidirectional, 1 Element, Silicon, RO | |
MXPLAD15KP16AE3/TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 15000W, 16V V(RWM), Unidirectional, 1 Element, Silicon, RO | |
MXPLAD15KP16AE3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 15000W, 16V V(RWM), Unidirectional, 1 Element, Silicon, RO |