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MXP6KE180AE3/TR

更新时间： 2024-10-30 05:30:31
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
4页 320K
描述
Trans Voltage Suppressor Diode, 600W, 154V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, T-18, 2 PIN

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MXP6KE180AE3/TR 数据手册

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TECHNICAL DATA SHEET  
Gort Road Business Park, Ennis, Co. Clare, Ireland.  
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298  
6 Lake Street, Lawrence, MA 01841  
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803  
Website: http://www.microsemi.com  
- High Reliability controlled devices  
- Economical series for thru hole mounting  
- Unidirectional (A) and Bidirectional (CA) construction  
- Selections for 5.8 to 171 V standoff voltages (VWM)  
600W Transient Voltage Suppressor  
LEVELS  
M, MA, MX, MXL  
DEVICES  
MP6KE6.8A thru MP6KE200CA, e3  
FEATURES  
.
.
.
High reliability controlled devices with wafer fabrication and assembly lot traceability  
100 % surge tested devices  
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes  
specify various screening and conformance inspection options based on MIL-PRF-19500.  
Refer to MicroNote 129 for more details on the screening options.  
.
.
.
Surface mount equivalents available as MSMBJ5.0A to MSMBJ170CA  
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B  
RoHS Compliant devices available by adding “e3” suffix  
3σ lot norm screening performed on Standby Current ID  
APPLICATIONS / BENEFITS  
T-18  
.
.
.
.
.
Economical TVS series for thru-hole mounting  
Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc.  
Protection from switching transients & induced RF  
Compliant to IEC 61000-4-2 and IEC 61000-4-4 for ESD and EFT protection respectively  
Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:  
o
o
o
o
Class 1: MP6KE6.8A to MP6KE130A or CA  
Class 2: MP6KE6.8A to MP6KE68A or CA  
Class 3: MP6KE6.8A to MP6KE36A or CA  
Class 4: MP6KE6.8A to MP6KE18A or CA  
.
Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance:  
o
o
Class 1: MP6KE6.8A to MP6KE43A or CA  
Class 2: MP6KE6.8A to MP6KE22A or CA  
MAXIMUM RATINGS  
.
Peak Pulse Power dissipation at 25 °C: 600 watts at 10/1000 μs (also see Figures 1,2, and 3)  
with impulse repetition rate (duty factor) of 0.01 % or less  
.
.
.
tclamping (0 V to V(BR) min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional  
Operating and Storage temperature: -65 °C to +150 °C  
Thermal Resistance: 25 °C/W at 3/8 inch (10 mm) lead length from body, or 85 C/W junction  
to ambient when mounted on FR4 PC board with 4 mm2 copper pads (1 oz) and track width 1  
mm, length 25 mm  
°
.
Steady-State Power: 5 watts @ TL=25 C 3/8 inch (10 mm) from body, or 1.47 W when  
mounted on FR4 PC board described for thermal resistance  
°
.
.
Forward Voltage at 25 C: 3.5 Volts maximum @ 100 Amp peak impulse of 8.3 ms half-sine  
wave (unidirectional only)  
Solder temperatures: 260 °C for 10 s (maximum)  
RF01007 Rev A, June 2010  
High Reliability Product Group  
Page 1 of 4  
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MXP6KE180ATRE3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 600W, 154V V(RWM), Bidirectional, 1 Element, Silicon, PLAS
MXP6KE180CAE3/TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 600W, 154V V(RWM), Bidirectional, 1 Element, Silicon, ROHS
MXP6KE180CATR MICROSEMI

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 		Trans Voltage Suppressor Diode, 600W, 154V V(RWM), Bidirectional, 1 Element, Silicon, PLAS
MXP6KE180CATRE3 MICROSEMI

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MXP6KE180CE3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 600W, 146V V(RWM), Bidirectional, 1 Element, Silicon, ROHS
MXP6KE180CE3TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 600W, 146V V(RWM), Bidirectional, 1 Element, Silicon, ROHS
MXP6KE180CTR MICROSEMI

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 		Trans Voltage Suppressor Diode, 600W, 146V V(RWM), Bidirectional, 1 Element, Silicon, PLAS

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