5秒后页面跳转
MXP3002 PDF预览

MXP3002

更新时间: 2024-11-08 22:11:19
品牌 Logo 应用领域
美高森美 - MICROSEMI 光电二极管光电二极管
页数 文件大小 规格书
1页 32K
描述
GaAs PIN Photodiode Chips

MXP3002 技术参数

是否Rohs认证:不符合生命周期:Obsolete
包装说明:CHIPReach Compliance Code:unknown
HTS代码:8541.40.60.10风险等级:5.92
Is Samacsys:N最大暗电源:1 nA
红外线范围:YESJESD-609代码:e0
功能数量:1光电设备类型:PIN PHOTODIODE
峰值波长:850 nm最小反向击穿电压:20 V
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

MXP3002 数据手册

  
MXP3000 Series  
GaAs PIN Photodiode Chips  
O P T O E L E C T R O N I C P R O D U C T S  
PRODUCT PREVIEW  
DESCRIPTION  
KEY FEATURES  
!"Low Dark Current  
Microsemi’s GaAs PIN  
Photodiode chips are ideal for wide  
bandwidth 850nm optical  
The MXP3000 series of  
!"Extremely low capacitance  
!"Wide bandwidth  
photodiodes are originally offered in  
die form for manufacturers of  
photodiode modules, supervisory  
pump laser circuits, and combination  
PIN Photodiode-transimpedance  
amplifier hybrids.  
!"Fast response time  
networking applications.  
APPLICATIONS/BENEFITS  
The five devices offered feature  
excellent dark current ratings of 1-3  
nA, and a breakdown voltage of 20  
Volts with the bandwidth options for  
1.4 GHz (active area of 250 mm2),  
1.75 GHz(active area of 200 mm2), 5  
GHz (active area of 100 mm2), 7 GHz  
(active area of 60 mm2), and 8.75  
GHz (active area of 30 mm2),  
!"850nm Fiber Optic  
Applications  
IMPORTANT:  
For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
Part Ratings and Characteristics  
Item  
Active Area(Dia.)  
Sym  
MXP3001  
30  
MXP3002  
60  
MXP3003  
100  
MXP3004 MXP3005  
Unit  
mm2  
Test Condition  
200  
0.0314  
850  
0.45  
2
250  
0.0491  
850  
0.45  
3
0.0007  
850  
0.45  
1
0.0028  
850  
0.45  
1
0.0078  
850  
0.45  
1
Photo Sensitive Area  
Detection Range  
Responsivity  
mm2  
Nm  
A/W  
nA  
R
VR=-5V, l = 850nm  
VR=-5V  
Dark Current  
Idark  
C
Capacitance  
0.3  
0.4  
0.6  
1.5  
2
pF  
VR=-5V  
Rise/Fall Time  
Bandwidth  
tr/t  
40  
50  
70  
200  
250  
ps  
VR=-5V, @ 850nm  
VR=-5V, @ 850nm  
IR=10uA  
f
8.75  
20  
7
5
20  
1.75  
20  
1.4  
20  
GHz  
Breakdown Voltage  
Chip Size  
VB  
20  
350 x 350  
40 x 100  
350 x 350  
40 x 100  
350 x 350  
100  
500 x 500  
100  
500 x 500  
100  
um x um  
um x um  
Bonding Pad Size  
Copyright 2000  
MSC1592.PDF 2000-10-16  
Microsemi  
Page 1  
Opto Electronics Products Group  
2830 S. Fairview Street, Santa Ana, CA 92704, (714) 979-8220 Fax (714)966-5256  
http://www.microsemi.com/opto  

与MXP3002相关器件

型号 品牌 获取价格 描述 数据表
MXP3003 MICROSEMI

获取价格

GaAs PIN Photodiode Chips
MXP3004 MICROSEMI

获取价格

GaAs PIN Photodiode Chips
MXP3005 MICROSEMI

获取价格

GaAs PIN Photodiode Chips
MXP3ACB6M0 MERITEK

获取价格

Quartz Crystal,
MXP3ACR3M579545 MERITEK

获取价格

Quartz Crystal,
MXP3AHR10M0 MERITEK

获取价格

Quartz Crystal,
MXP3CAA31M999 MERITEK

获取价格

Quartz Crystal,
MXP3CAA32M0 MERITEK

获取价格

Quartz Crystal,
MXP3CAA8M0 MERITEK

获取价格

Quartz Crystal,
MXP3CCK4M999 MERITEK

获取价格

Quartz Crystal,