Datasheet > MXP3004

MXP3004

更新时间： 2024-11-08 22:11:19

品牌	Logo	应用领域
美高森美 - MICROSEMI		光电二极管光电二极管
页数	文件大小	规格书
1页	32K
描述
GaAs PIN Photodiode Chips

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MXP3004 数据手册

MXP3000 Series

GaAs PIN Photodiode Chips

O P T O E L E C T R O N I C P R O D U C T S

PRODUCT PREVIEW

DESCRIPTION

KEY FEATURES

!"Low Dark Current

Microsemi’s GaAs PIN

Photodiode chips are ideal for wide

bandwidth 850nm optical

The MXP3000 series of

!"Extremely low capacitance

!"Wide bandwidth

photodiodes are originally offered in

die form for manufacturers of

photodiode modules, supervisory

pump laser circuits, and combination

PIN Photodiode-transimpedance

amplifier hybrids.

!"Fast response time

networking applications.

APPLICATIONS/BENEFITS

The five devices offered feature

excellent dark current ratings of 1-3

nA, and a breakdown voltage of 20

Volts with the bandwidth options for

1.4 GHz (active area of 250 mm²),

1.75 GHz(active area of 200 mm²), 5

GHz (active area of 100 mm²), 7 GHz

(active area of 60 mm²), and 8.75

GHz (active area of 30 mm²),

!"850nm Fiber Optic

Applications

IMPORTANT:

For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

Part Ratings and Characteristics

Item

Active Area(Dia.)

Sym

—

MXP3001

MXP3002

MXP3003

100

MXP3004 MXP3005

Unit

mm2

Test Condition

—

200

0.0314

850

0.45

250

0.0491

850

0.45

0.0007

850

0.45

0.0028

850

0.45

0.0078

850

0.45

Photo Sensitive Area

Detection Range

Responsivity

mm2

A/W

—

V_R=-5V, l = 850nm

V_R=-5V

Dark Current

I_dark

Capacitance

0.3

0.4

0.6

1.5

V_R=-5V

Rise/Fall Time

Bandwidth

t_r/t

200

250

V_R=-5V, @ 850nm

I_R=10uA

8.75

1.75

1.4

GHz

Breakdown Voltage

Chip Size

350 x 350

40 x 100

350 x 350

40 x 100

350 x 350

100

500 x 500

100

500 x 500

100

um x um

Bonding Pad Size

MSC1592.PDF 2000-10-16

Microsemi

Page 1

Opto Electronics Products Group

2830 S. Fairview Street, Santa Ana, CA 92704, (714) 979-8220 Fax (714)966-5256

http://www.microsemi.com/opto

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