MXP1158

更新时间： 2024-11-10 22:45:43

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体光电晶体管光电晶体管
页数	文件大小	规格书
1页	41K
描述
Phototransistor Optocoupler

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数据手册

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MXP1158 数据手册

2830 S. Fairview St.

Santa Ana, CA 92704

PH: 714.979.8220

FAX: 714.557.5989

MXP 1158

Phototransistor Optocoupler

Features

• 2,500 Volt electrical isolation

• Standard 8-pin DIP package

• High current transfer ratio for low IF

• Screening similar to JANTX, JANTXV or

JANS equivalent

Description

• The MXP1158 consists of a light emitting diode and an NPN phototransistor.

• The device is available in a hermetic 8-pin DIP package.

Electrical Characteristics @ 25^oC

SYMBOL

IC(on)

VCEsat

BVceo

BVebo

ICE(off)

CHARCTERISTIC

On-State Collector Current

Saturation Voltage

Breakdown Voltage

Off-State Leakage Current

Input Forward Voltage

Input Reverse Current

Rise Time

CONDITIONS

IF = 1 mA, VCE = 5 Volts

IF = 2 mA, IC = 1.0 mA

IC = 1.0 mA

Ieb = 100 uA

VC = 20 Volts

IF = 10 mA

VR = 2.0 V

VCC = 10 Volts, RL = 100 Ohms

IF = 5 mA

Min

1.0

Max

8.0

0.3

UNITS

mAmps

Volts

nAmps

Volts

uAmps

usec

100

1.0

100.0

Fall Time

usec

Absolute Maximum Ratings

LED Input Diode

2.0 Vdc minimum @ IR = 10 uA

Reverse Voltage

Forward Voltage

1.95 Vdc maximum @ IF = 100 mA

1.0 Amp @ 1 msec pulse width

200 mW

Peak Forward Current

Power Dissipation

Input to Output Isolation

Storage Temperature Range

Operating Temperature Range

+/- 2,500 Vdc

-65 C to +150 C

-55 C to +125 C

Data Sheet # MSC1334.PDF

Updated: September 1999

O p t o P r o d u c t s

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