Datasheet > MXP120A080FW

MXP120A080FW

更新时间： 2024-11-12 17:15:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
11页	419K
描述
MaxSiC?1200 V N-Channel SiC MOSFET

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MXP120A080FW 数据手册

MXP120A080FW

Vishay MaxPower Semiconductor

www.vishay.com

MaxSiC™ 1200 V N-Channel SiC MOSFET

FEATURES

• Fast switching speed

• Short circuit withstand time 3 μs

TO-247 3L

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• Charger

N-Channel MOSFET

• Auxiliary motor drive

Marking Code: 120A080FW

• DC/DC converter



PRODUCT SUMMARY

V_DS(V) at T_Jmax.

1200

_DS(on)typ. (m) at 25 °C

Q_gtyp. (nC)

_D(A)

_osstyp. (pF)

_D(W)

Configuration

V_GS= 20 V

47.3

139

Single

ORDERING INFORMATION

Package

TO-247 3L

Lead (Pb)-free and halogen-free

MXP120A080FW-Y-GE3

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

Drain-source voltage ^a

SYMBOL

V_DS

V_GS

I_D

LIMIT

UNIT

1200

Gate-source voltage

-10 / +22

_C= 25 °C

Continuous drain current

T_C= 100 °C

I_D

Pulsed drain current ^b

I_DM

Short-circuit withstand time

T_SC

139

μs

_C= 25 °C

P_D

Maximum power dissipation

T_C= 100 °C

P_D

Operating junction and storage temperature range

Soldering recommendations (peak temperature)

T_J, T_stg

-55 to +150

260

°C

For 10 s

Notes

a. T_J= 25 °C to 150 °C

b. Repetitive rating; pulse width limited by maximum junction temperature

S24-0489-Rev. C, 03-May-2024

Document Number: 92811

For technical questions, contact: sicmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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