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MXLSMCJLCE12A PDF预览

MXLSMCJLCE12A

更新时间: 2024-11-12 13:59:11
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
7页 1164K
描述
Trans Voltage Suppressor Diode, 1500W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, PLASTIC, SMCJ, 2 PIN

MXLSMCJLCE12A 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:PLASTIC, SMCJ, 2 PIN
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.25
其他特性:HIGH RELIABILITY最大击穿电压:14.7 V
最小击穿电压:13.3 V击穿电压标称值:14 V
最大钳位电压:19.9 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214ABJESD-30 代码:R-PDSO-C2
JESD-609代码:e0湿度敏感等级:1
最大非重复峰值反向功率耗散:1500 W元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:5 W认证状态:Not Qualified
最大重复峰值反向电压:12 V子类别:Transient Suppressors
表面贴装:YES技术:AVALANCHE
端子面层:TIN LEAD端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MXLSMCJLCE12A 数据手册

 浏览型号MXLSMCJLCE12A的Datasheet PDF文件第2页浏览型号MXLSMCJLCE12A的Datasheet PDF文件第3页浏览型号MXLSMCJLCE12A的Datasheet PDF文件第4页浏览型号MXLSMCJLCE12A的Datasheet PDF文件第5页浏览型号MXLSMCJLCE12A的Datasheet PDF文件第6页浏览型号MXLSMCJLCE12A的Datasheet PDF文件第7页 

MXLSMCJLCE12A 替代型号

型号 品牌 替代类型 描述 数据表
MXLSMCJLCE12AE3 MICROSEMI

完全替代

Trans Voltage Suppressor Diode, 1500W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MXLSMCGLCE12AE3 MICROSEMI

类似代替

Trans Voltage Suppressor Diode, 1500W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO-

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