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MXLSMCJLCE12ATR PDF预览

MXLSMCJLCE12ATR

更新时间: 2024-11-13 09:35:19
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
4页 316K
描述
Trans Voltage Suppressor Diode, 1500W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, PLASTIC, SMCJ, 2 PIN

MXLSMCJLCE12ATR 技术参数

是否Rohs认证: 不符合生命周期:Active
零件包装代码:DO-214AB包装说明:R-PDSO-C2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.25其他特性:HIGH RELIABILITY
最大击穿电压:14.7 V最小击穿电压:13.3 V
击穿电压标称值:14 V最大钳位电压:19.9 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-214AB
JESD-30 代码:R-PDSO-C2JESD-609代码:e0
最大非重复峰值反向功率耗散:1500 W元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性:UNIDIRECTIONAL最大功率耗散:5 W
认证状态:Not Qualified最大重复峰值反向电压:12 V
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子面层:TIN LEAD
端子形式:C BEND端子位置:DUAL
Base Number Matches:1

MXLSMCJLCE12ATR 数据手册

 浏览型号MXLSMCJLCE12ATR的Datasheet PDF文件第2页浏览型号MXLSMCJLCE12ATR的Datasheet PDF文件第3页浏览型号MXLSMCJLCE12ATR的Datasheet PDF文件第4页 
TECHNICAL DATA SHEET  
Gort Road Business Park, Ennis, Co. Clare, Ireland.  
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298  
6 Lake Street, Lawrence, MA 01841  
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803  
Website: http://www.microsemi.com  
- High Reliability controlled devices  
- Unidirectional (A) construction  
- Available in both J-bend and Gull-wing terminations  
- Selections for 6.5 to 170 V standoff voltages (VWM)  
SURFACE MOUNT  
1500 Watt Low Capacitance  
Transient Voltage Suppressor  
LEVELS  
M, MA, MX, MXL  
DEVICES  
MSMCJLCE6.5A thru MSMCJLCE170A, e3  
and MSMCGLCE6.5A thru MSMCGLCE170A, e3  
FEATURES  
.
.
.
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High reliability controlled devices with fabrication and assembly lot traceability  
100% surge tested devices  
Low capacitance of 100 pF or less  
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes  
specify various screening and conformance inspection options based on MIL-PRF-19500. Refer  
to MicroNote 129 for more details on the screening options.  
.
.
.
.
Axial-lead equivalent packages for thru-hole mounting available as MLCE6.5A to MLCE170CA  
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B  
RoHS compliant devices available by adding an “e3” suffix  
3σ lot norm screening performed on Standby Current ID  
APPLICATIONS / BENEFITS  
.
.
.
1500 Watts of Peak Pulse Power at 10/1000 s  
Low capacitance for data line protection to 1 MHz  
Protection for aircraft fast data rate lines up to Level 5 Waveform 4 and Level 2 Waveform 5A in  
RTCA/DO-160D (also see MicroNote 130) & ARINC 429 with bit rates of 100 kb/s (per ARINC  
429, Part 1, par 2.4.1.1)  
.
.
.
IEC 61000-4-2 ESD 15 kV (air), 8 kV (contact)  
IEC 61000-4-5 (lightning) as further detailed in MLCE6.5 thru MLCE170A data sheet  
T1/E1 Line Cards  
.
.
Base Stations, WAN & XDSL Interfaces  
CSU/DSU Equipment  
MAXIMUM RATINGS  
.
.
Peak Pulse Power dissipation at 25 ºC: 1500 watts at 10/1000 μs (also see Figures 1,2, and 3)  
with impulse repetition rate (duty factor) of 0.01 % or less  
Clamping Factor: 1.40 @ Full Rated power:  
1.30 @ 50 % Rated power  
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.
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tclamping (0 V to VBR min): Less than 5x10-9 seconds  
Operating and Storage temperatures: -65 ºC to +150 ºC  
Steady State power dissipation: 5.0W @ TL = 50 ºC  
Thermal Resistance: 20 ºC /W (typical junction to lead (tab) at mounting plane  
When pulse testing, do not pulse in opposite direction. (See “Schematic Applications” section  
herein and Figures 5 & 6 for further protection in both directions)  
.
Solder temperatures: 260 ºC for 10 s (maximum)  
RF01002 Rev A, June 2010  
High Reliability Product Group  
Page 1 of 4  

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