Datasheet > MXLSMBJ2K3.3E3

MXLSMBJ2K3.3E3

更新时间： 2024-11-24 05:10:59

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
4页	306K
描述
Trans Voltage Suppressor Diode, 2000W, 3.3V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2

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MXLSMBJ2K3.3E3 数据手册

TECHNICAL DATA SHEET

Gort Road Business Park, Ennis, Co. Clare, Ireland.

Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298

6 Lake Street, Lawrence, MA 01841

Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803

Website: http://www.microsemi.com

- High Reliability controlled devices

Surface Mount 2 kW

- Unidirectional construction

Transient Voltage Suppressor

- Available in both J-bend and Gull-wing terminations

- Selections for 3 V to 5 V standoff voltages (VWM)

LEVELS

M, MA, MX, MXL

DEVICES

MSMBJ2K3.0 thru MSMBJ2K5.0, e3

MSMBG2K3.0 thru MSMBG2K5.0,e3

FEATURES

High reliability controlled devices with wafer fabrication and assembly lot traceability

100 % surge tested devices

Suppresses transients up to 2 kW @ 8/20 µs

Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes

specify various screening and conformance inspection options based on MIL-PRF-19500.

Refer to MicroNote 129 for more details on the screening options.

Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B

3σ lot norm screening performed on Standby Current I_D

APPLICATIONS / BENEFITS

Voltage and reverse (leakage) current lowest available

Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc.

Protection from switching transients & induced RF

Compliant to IEC61000-4-2 and IEC61000-4-4 for ESD and EFT protection respectively

Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance for Class 1

MAXIMUM RATINGS

Peak Pulse Power dissipation at 25 ºC: 2000 W @ 8/20 µs or 300 W @ 10/1000 µs

with impulse repetition rate (duty factor) of 0.01 maximum (also see Figure 1 and 4)

Steady-state power dissipation: 5 Watts @ T_L≤ 25 °C or 1.38 Watts at TA = 25 °C when

mounted on FR4 PC board with recommended footprint

Tclamping (0 Volts to VBR min.): <100 ps

Operating and Storage temperatures: -65°C to +150°C

Forward Voltage @ 25 °C: 3.5 Volts maximum @ 30 Amp peak impulse of 8.3 ms half-sine

wave (unidirectional only)

Solder temperatures: 260 °C for 10 s (maximum)

RF01019 Rev A, November 2010

High Reliability Product Group

Page 1 of 4

12 3 4

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与MXLSMBJ2K3.3E3相关器件

型号	品牌	获取价格	描述	数据表
MXLSMBJ2K3.3E3/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 2000W, 3.3V V(RWM), Unidirectional, 1 Element, Silicon, DO
MXLSMBJ2K3.3E3TR	MICROSEMI	获取价格	2000W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2
MXLSMBJ2K4.0	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 2000W, 4V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXLSMBJ2K4.0E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 2000W, 4V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXLSMBJ2K4.0E3TR	MICROSEMI	获取价格	2000W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2
MXLSMBJ2K4.5/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 2000W, 4.5V V(RWM), Unidirectional, 1 Element, Silicon, DO
MXLSMBJ2K4.5E3/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 2000W, 4.5V V(RWM), Unidirectional, 1 Element, Silicon, DO
MXLSMBJ2K4.5E3TR	MICROSEMI	获取价格	2000W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2
MXLSMBJ2K4.5TR	MICROSEMI	获取价格	2000W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC PACKAGE-2
MXLSMBJ2K5.0/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 2000W, 5V V(RWM), Unidirectional, 1 Element, Silicon, DO-2

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