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MXLSMBJ2K4.0E3 PDF预览

MXLSMBJ2K4.0E3

更新时间: 2024-11-20 14:54:03
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
6页 451K
描述
Trans Voltage Suppressor Diode, 2000W, 4V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2

MXLSMBJ2K4.0E3 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:DO-214AA
包装说明:R-PDSO-J2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.84
Is Samacsys:N其他特性:HIGH RELIABILITY
最小击穿电压:5 V最大钳位电压:6.3 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-214AA
JESD-30 代码:R-PDSO-J2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:2000 W
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:1.38 W
认证状态:Not Qualified最大重复峰值反向电压:4 V
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子面层:MATTE TIN
端子形式:J BEND端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MXLSMBJ2K4.0E3 数据手册

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型号 品牌 获取价格 描述 数据表
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Trans Voltage Suppressor Diode, 2000W, 4.5V V(RWM), Unidirectional, 1 Element, Silicon, DO
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Trans Voltage Suppressor Diode, 2000W, 5V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
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Trans Voltage Suppressor Diode, 2000W, 5V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXLSMBJ2K5.0E3TR MICROSEMI

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2000W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2
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