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MX67L9632J3TC-15 PDF预览

MX67L9632J3TC-15

更新时间: 2024-11-11 19:56:35
品牌 Logo 应用领域
旺宏电子 - Macronix 可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
50页 661K
描述
Flash, 2MX16, 150ns, PDSO56, 14 X 20 MM, PLASTIC, MO-142, TSOP1-56

MX67L9632J3TC-15 数据手册

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ADVANCED INFORMATION  
MX67L12816J3/MX67L9632J3  
32M-BIT[4Mbx8or2Mbx16]FlashPlus96M-BIT[12Mbx8or6Mbx16]MTPCMOS,  
16M-BIT[2Mbx8or1Mbx16]FlashPlus 128M-BIT[16Mbx8or8Mbx16]MTPCMOS  
FlashPlusMTPMonoChip  
FEATURES  
• 2.7V to 3.6V operation voltage (Output power supply  
1.65V-1.95V or 2.7V-3.6V throughVCCQ pin)  
• Separate banks for data and code  
- MX67L9632J3:  
Buffer Command)  
• Program/Erase Cycles  
- MX67L12816J3  
- 160K Total Min. Erase Cycle (for Flash Bank)  
- 10K Minimum Erase Cycles per Block  
- 128K Total Min. Erase Cycle for MTP Bank  
- 1,000 Minimum Erase Cycles per block  
- MX67L9632J3  
32Mb(x8/x16) Flash Bank for data  
96Mb(x8/x16) MTP Bank for code  
- MX67L12816J3:  
16Mb(x8/x16) Flash Bank for data  
128Mb(x8/x16) MTP Bank for code  
• Block Structure  
- 320K Total Min. Erase Cycle (for Flash Bank)  
- 10K Minimum Erase Cycles per Block  
- 96K Total Min. Erase Cycle for MTP Bank  
- 1,000 Minimum Erase Cycles per block  
- Flash Bank of MX67L9632J3  
Thirty-two 128K byte blocks  
- MTP Bank of MX67L9632J3  
Ninety-six 128K byte blocks  
SOFTWARE FEATURE  
- Flash Bank of MX67L12816J3  
Sixteen 128K byte blocks  
• Support Common Flash Interface (CFI) (for  
MX67L9632J3)  
- MTP Bank of MX67L12816J3  
Hundred and Twenty-eight 128K byte blocks  
• Fast random / page mode access time  
- 150/25 ns Read Access Time  
• 128-bit Protection Register  
- 64-bit Unique Device Identifier  
- 64-bit User Programmable OTP Cells  
• 32-Byte Write Buffer  
- Flash device parameters stored on the device and  
provide the host system to access.  
• Automation Suspend Options  
- Block Erase Suspend to Read  
- Block Erase Suspend to Program  
- Program Suspend to Read  
HARDWARE FEATURE  
• A0 pin  
- 6 us/byte Effective Programming Time  
• Enhanced Data Protection Features Absolute Protec-  
tion with VPEN = GND  
- Select low byte address when device is in byte mode.  
Not used in word mode.  
- Flexible Block Locking  
• STS pin  
- Block Erase/Program Lockout during PowerTransi-  
tions  
- Indicates the status of the internal state machine.  
• VPEN pin  
• OperationTemperature:-40°C to 85°C  
- For Erase /Program/ Block Look enable.  
• VCCQ Pin  
PERFORMANCE  
• Low power dissipation  
-The output buffer power supply, control the device 's  
output voltage.  
- 10mA active current  
- 50uA standby current  
PACKAGING  
- 5uA deep power-down current  
• High Performance  
- 56-LeadTSOP  
- 64-ball Flip Chip CSP  
- Block erase time: 2s typ.  
- Byte programming time: 210us typ.  
- Block programming time: 0.8s typ. (using Write to  
TECHNOLOGY  
- 0.25u 2bits per cell NBit Flash Technology  
P/N:PM0904  
REV. 0.2, NOV. 22, 2002  
1

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