ADVANCED INFORMATION
MX67L12816J3/MX67L9632J3
32M-BIT[4Mbx8or2Mbx16]FlashPlus96M-BIT[12Mbx8or6Mbx16]MTPCMOS,
16M-BIT[2Mbx8or1Mbx16]FlashPlus 128M-BIT[16Mbx8or8Mbx16]MTPCMOS
FlashPlusMTPMonoChip
FEATURES
• 2.7V to 3.6V operation voltage (Output power supply
1.65V-1.95V or 2.7V-3.6V throughVCCQ pin)
• Separate banks for data and code
- MX67L9632J3:
Buffer Command)
• Program/Erase Cycles
- MX67L12816J3
- 160K Total Min. Erase Cycle (for Flash Bank)
- 10K Minimum Erase Cycles per Block
- 128K Total Min. Erase Cycle for MTP Bank
- 1,000 Minimum Erase Cycles per block
- MX67L9632J3
32Mb(x8/x16) Flash Bank for data
96Mb(x8/x16) MTP Bank for code
- MX67L12816J3:
16Mb(x8/x16) Flash Bank for data
128Mb(x8/x16) MTP Bank for code
• Block Structure
- 320K Total Min. Erase Cycle (for Flash Bank)
- 10K Minimum Erase Cycles per Block
- 96K Total Min. Erase Cycle for MTP Bank
- 1,000 Minimum Erase Cycles per block
- Flash Bank of MX67L9632J3
Thirty-two 128K byte blocks
- MTP Bank of MX67L9632J3
Ninety-six 128K byte blocks
SOFTWARE FEATURE
- Flash Bank of MX67L12816J3
Sixteen 128K byte blocks
• Support Common Flash Interface (CFI) (for
MX67L9632J3)
- MTP Bank of MX67L12816J3
Hundred and Twenty-eight 128K byte blocks
• Fast random / page mode access time
- 150/25 ns Read Access Time
• 128-bit Protection Register
- 64-bit Unique Device Identifier
- 64-bit User Programmable OTP Cells
• 32-Byte Write Buffer
- Flash device parameters stored on the device and
provide the host system to access.
• Automation Suspend Options
- Block Erase Suspend to Read
- Block Erase Suspend to Program
- Program Suspend to Read
HARDWARE FEATURE
• A0 pin
- 6 us/byte Effective Programming Time
• Enhanced Data Protection Features Absolute Protec-
tion with VPEN = GND
- Select low byte address when device is in byte mode.
Not used in word mode.
- Flexible Block Locking
• STS pin
- Block Erase/Program Lockout during PowerTransi-
tions
- Indicates the status of the internal state machine.
• VPEN pin
• OperationTemperature:-40°C to 85°C
- For Erase /Program/ Block Look enable.
• VCCQ Pin
PERFORMANCE
• Low power dissipation
-The output buffer power supply, control the device 's
output voltage.
- 10mA active current
- 50uA standby current
PACKAGING
- 5uA deep power-down current
• High Performance
- 56-LeadTSOP
- 64-ball Flip Chip CSP
- Block erase time: 2s typ.
- Byte programming time: 210us typ.
- Block programming time: 0.8s typ. (using Write to
TECHNOLOGY
- 0.25u 2bits per cell NBit Flash Technology
P/N:PM0904
REV. 0.2, NOV. 22, 2002
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