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MX6511A PDF预览

MX6511A

更新时间： 2024-11-04 20:47:11
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
2页 60K
描述
Rectifier Diode, 8 Element, 0.3A, Silicon, HERMETIC SEALED, CERAMIC, DIP-14

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MX6511A 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：DIP包装说明：R-CDIP-T14
针数：14Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.70
风险等级：5.69其他特性：HIGH RELIABILITY
配置：COMMON CATHODE, 8 ELEMENTS二极管元件材料：SILICON
二极管类型：RECTIFIER DIODEJESD-30 代码：R-CDIP-T14
JESD-609代码：e0元件数量：8
端子数量：14最高工作温度：150 °C
最低工作温度：-65 °C最大输出电流：0.3 A
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：IN-LINE峰值回流温度（摄氏度）：NOT SPECIFIED
最大功率耗散：0.4 W认证状态：Not Qualified
最大反向恢复时间：0.02 µs表面贴装：NO
端子面层：TIN LEAD端子形式：THROUGH-HOLE
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

MX6511A 数据手册

 浏览型号MX6511A的Datasheet PDF文件第2页 
6511A  
Isolated Diode Array with  
HiRel MQ, MX, MV, and SP Screening Options  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated  
by a planar process and mounted in a 14-PIN ceramic DIP package for use as  
steering diodes protecting up to seven I/O ports from ESD, EFT, or surge by directing  
them either to the positive side of the power supply line or to ground (see Figure 1).  
An external TVS diode may be added between the positive supply line and ground to  
prevent overvoltage on the supply rail. They may also be used in fast switching core-  
driver applications. This includes computers and peripheral equipment such as  
magnetic cores, thin-film memories, plated-wire memories, etc., as well as decoding or  
encoding applications. These arrays offer many advantages of integrated circuits such  
as high-density packaging and improved reliability. This is a result of fewer pick and  
place operations, smaller footprint, smaller weight, and elimination of various discrete  
packages that may not be as user friendly in PC board mounting.  
14-PIN Ceramic DIP  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
•
•
•
•
•
Hermetic Ceramic Package  
•
•
•
•
•
•
•
High Frequency Data Lines  
RS-232 & RS-422 Interface Networks  
Ethernet: 10 Base T  
Computer I/O Ports  
LAN  
Isolated Diodes to Eliminate Cross-Talk Voltages  
High Breakdown Voltage VBR > 75 V at 5 μA  
Low Leakage IR< 100nA at 40 V  
Low Capacitance C < 4.0 pF  
Switching Core Drivers  
Switching Speeds less than 10 ns  
IEC 61000-4 Compatible (see circuit in figure 1)  
61000-4-2 ESD: Air 15 kV, contact 8 kW  
61000-4-4 (EFT): 40 A – 5/50 ns  
61000-4-5 (surge): 12 A 8/20 μs  
Options for screening in accordance with MIL-PRF-  
19500/474 for JAN, JANTX, JANTXV, and JANS are  
available by adding MQ, MX, MV, or SP prefixes  
respectively to part numbers. For example, designate  
MX6511A for a JANTX screen.  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
•
•
•
•
•
Reverse Breakdown Voltage of 75 Vdc (Note 1 & 2)  
Continuous Forward Current of 300 mA dc (Note 1 & 3)  
Peak Surge Current (tp=1/120 s) of 500 mA dc (Note 1)  
400 mW Power Dissipation per Junction @ 25oC  
•
•
•
•
•
14-PIN Ceramic DIP  
Weight 2.05 grams (approximate)  
Marking: Logo, part number, date code  
Pin #1 to the left of the indent on top of package  
Carrier Tubes; 25 pcs (standard)  
600 mW Power Dissipation per Package @ 25oC (Note 4)  
Operating Junction Temperature range –65 to +150oC  
Storage Temperature range of –65 to +150oC  
NOTE 1: Each Diode  
NOTE 2: Pulsed: PW = 100 ms max; duty cycle <20%  
NOTE 3: Derate at 2.4 mA/oC above +25oC  
NOTE 4: Derate at 4.8 mW/oC above +25oC  
.
ELECTRICAL CHARACTERISTICS (Per Diode) @ 25oC unless otherwise specified  
MAXIMUM  
REVERSE  
RECOVERY TIME  
trr  
MAXIMUM  
FORWARD  
VOLTAGE  
MAXIMUM  
FORWARD  
RECOVERY  
TIME  
MAXIMUM  
FORWARD  
VOLTAGE  
MATCH  
MAXIMUM  
REVERSE  
CURRENT  
MAXIMUM  
REVERSE  
CURRENT  
MAXIMUM  
CAPACITANCE  
(PIN TO PIN)  
I = IR = 10 mAdc  
F
V
F1  
Ct  
t
fr  
i
= 1 mAdc  
V
F5  
rr  
I = 100 mA  
I
I
VR = 0 V  
F = 1 MHz  
F
R1  
R2  
I = 100 mA  
F
R = 100 ohms  
L
I = 10 mA  
F
(Note 1)  
VR = 40 V  
VR = 20 V  
PART  
NUMBER  
V
µA  
nA  
pF  
ns  
ns  
mV  
6511A  
1
0.1  
25  
4.0  
15  
10  
5
NOTE 1: Pulsed: PW = 300 µs +/- 50 µs, duty cycle <2%, 90 µs after leading edge.  
Copyright © 2007  
3-27-2007  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
12

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