Datasheet > 存储 > SRAM> MX66C1024SI-10

MX66C1024SI-10

更新时间： 2024-11-03 22:16:43

品牌	Logo	应用领域
旺宏电子 - Macronix		存储内存集成电路静态存储器光电二极管
页数	文件大小	规格书
10页	315K
描述
5V Low Power CMOS SRAM 128 x 8 Bit

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MX66C1024SI-10 数据手册

MX66C1024

5V Low Power CMOS SRAM 128 x 8 Bit

n DESCRIPTION

n FEATURES

The MX66C1024 is a high performance, extremely low power

CMOS

Static Random Access Memory organized as 131,072 words by 8

bits and operates at 5.0V supply voltage.

• Vcc operation voltage : 5V

• Low power consumption :

45mA (Max.) write current

2mA (Max.) read current

Advanced CMOS technology and circuit techniques provide both

high speed and low power features with a typical CMOS standby

current of 0.005uA and maximum access time of 70ns and 100ns

Easy memory expansion is provided by an active LOW chip

enable (CE1), an active HIGH chip enable (CE2), and active

LOW output enable (OE) and three-state output drivers.

The MX66C1024 has an automatic power down feature, reducing

the power consumption significantly when chip is deselected.

The MX66C1024 is available in the JEDEC standard 32 pin

SOP, STSOP and TSOP.

0.6uA (Typ.) CMOS standby current

• High speed access time :

-70

-10

70ns (Max.)

100ns (Max.)

• Input levels are CMOS-compatible

• Automatic power down when chip is deselected

• Three state outputs

• Fully static operation

• Data retention supply voltage as low as 1.2V

• Easy expansion with CE2, CE1, and OE options

n PIN CONFIGURATIONS

n BLOCK DIAGRAM

A16

A14

A12

VCC

A15

CE2

A12

A14

A16

A15

A13

Address

Memory Array

1024 x 1024

1024

Row

Input

MX66C1024MC

MX66C1024MI

A11

Decoder

Buffer

A10

CE1

DQ7

DQ6

DQ5

DQ4

DQ3

A11

DQ0

DQ1

DQ2

GND

1024

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

Data

Input

Column I/O

Buffer

Write Driver

Sense Amp

A11

Data

Output

Buffer

A10

CE1

DQ7

DQ6

DQ5

DQ4

DQ3

GND

DQ2

DQ1

DQ0

128

A13

CE2

A15

VCC

A16

A14

A12

Column Decoder

MX66C1024TC

MX66C1024SC

MX66C1024TI

MX66C1024SI

CE2

CE1

Control

Address Input Buffer

Vdd

Gnd

A5 A4 A3 A2 A1 A0 A10

P/N DS00040

Rev. 1.0, November 1999

Macronix America Inc., USA 1338 Ridder Park Dr., San Jose, CA 95131

Tel (408)453-8088 Fax (408)451-0876 http: www.macronix.com

12 3 4 5 6 7...10

中文翻译

下载PDF

与MX66C1024SI-10相关器件

型号	品牌	获取价格	描述	数据表
MX66C1024SI-70	Macronix	获取价格	5V Low Power CMOS SRAM 128 x 8 Bit
MX66C1024TC-10	Macronix	获取价格	5V Low Power CMOS SRAM 128 x 8 Bit
MX66C1024TC-70	Macronix	获取价格	5V Low Power CMOS SRAM 128 x 8 Bit
MX66C1024TI-10	Macronix	获取价格	5V Low Power CMOS SRAM 128 x 8 Bit
MX66C1024TI-70	Macronix	获取价格	5V Low Power CMOS SRAM 128 x 8 Bit
MX66C256	Macronix	获取价格	Very Low Power 32k x 8 CMOS SRAM
MX66C256MC-10	Macronix	获取价格	Very Low Power 32k x 8 CMOS SRAM
MX66C256MC-70	Macronix	获取价格	Very Low Power 32k x 8 CMOS SRAM
MX66C256MI-10	Macronix	获取价格	Very Low Power 32k x 8 CMOS SRAM
MX66C256MI-70	Macronix	获取价格	Very Low Power 32k x 8 CMOS SRAM

与MX66C1024SI-10相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

7
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

34
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

30

产品中心

服务支持

精选活动

关于我们

帮助中心

MX66C1024SI-10

MX66C1024SI-10 数据手册

与MX66C1024SI-10相关器件

与MX66C1024SI-10相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MX66C1024SI-10

MX66C1024SI-10 数据手册

与MX66C1024SI-10相关器件

与MX66C1024SI-10相关文章

您还可以找

您在本页遇到什么问题？