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MX6507A PDF预览

MX6507A

更新时间: 2024-11-04 20:02:07
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
2页 60K
描述
Rectifier Diode, 8 Element, 0.3A, Silicon, HERMETIC SEALED, CERAMIC, DIP-16

MX6507A 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DIP包装说明:R-CDIP-T16
针数:16Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.91其他特性:HIGH RELIABILITY
配置:COMMON ANODE, 8 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-CDIP-T16
JESD-609代码:e0元件数量:8
端子数量:16最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:0.3 A
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.4 W认证状态:Not Qualified
最大反向恢复时间:0.02 µs表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MX6507A 数据手册

 浏览型号MX6507A的Datasheet PDF文件第2页 
6507A  
Isolated Diode Array with  
HiRel MQ, MX, MV, and SP Screening Options  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
These low capacitance diode arrays with common anode are multiple, discrete, isolated  
junctions fabricated by a planar process and mounted in a 10-PIN package for use as  
steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing  
them to ground (see figure 1). This circuit application is further complimented by the  
1N6506 (separate data sheet) that has a common cathode. An external TVS diode  
may be added between the positive supply line and ground to prevent overvoltage on  
the supply rail. They may also be used in fast switching core-driver applications. This  
includes computers and peripheral equipment such as magnetic cores, thin-film  
memories, plated-wire memories, etc., as well as decoding or encoding applications.  
These arrays offer many advantages of integrated circuits such as high-density  
packaging and improved reliability. This is a result of fewer pick and place operations,  
smaller footprint, smaller weight, and elimination of various discrete packages that may  
not be as user friendly in PC board mounting.  
14-PIN Ceramic DIP  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
High Frequency Data Lines  
RS-232 & RS-422 Interface Networks  
Ethernet: 10 Base T  
Computer I/O Ports  
LAN  
Hermetic Ceramic Package  
Isolated Diodes to Eliminate Cross-Talk Voltages  
High Breakdown Voltage VBR > 60 V at 10 μA  
Low Leakage IR< 100nA at 40 V  
Low Capacitance C < 8.0 pF  
Switching Core Drivers  
IEC 61000-4 Compatible (see circuit in figure 1)  
61000-4-2 ESD: Air 15 kV, contact 8 kW  
61000-4-4 (EFT): 40 A – 5/50 ns  
61000-4-5 (surge): 12 A 8/20 μs  
Options for screening in accordance with MIL-PRF-  
19500/474 for JAN, JANTX, JANTXV, and JANS are  
available by adding MQ, MX, MV, or SP prefixes  
respectively to part numbers. For example, designate  
MX6507A for a JANTX screen.  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
14-PIN Ceramic DIP  
VBR Reverse Breakdown Voltage 60 V min (Notes 1 & 2)  
IO Continuous Forward Current of 300 mA (Notes 1 & 3)  
IFSM Forward Surge Current (tp=1/120 s) 500 mA (Note 1)  
400 mW Power Dissipation per Junction @ 25oC  
600 mW Power Dissipation per Package @ 25oC (Note 4)  
Operating Junction Temperature range –65 to +150oC  
Storage Temperature range of –65 to +200oC  
Weight 2.05 grams (approximate)  
Marking: Logo, part number, date code  
Pin #1 to the left of the indent on top of package  
Carrier Tubes; 25 pcs (standard)  
NOTE 1: Each Diode  
NOTE 2: Pulsed: PW = 100 ms max; duty cycle <20%  
NOTE 3: Derate at 2.4 mA/oC above +25oC  
NOTE 4: Derate at 4.0 mW/oC above +25oC  
MAXIMUM  
REVERSE  
MAXIMUM  
FORWARD  
VOLTAGE  
MAXIMUM  
MAXIMUM  
REVERSE  
CURRENT  
MAXIMUM  
CAPACITANCE  
(PIN TO PIN)  
RECOVERY TIME  
FORWARD  
trr  
RECOVERY TIME  
I = IR = 200 mA  
i = 20 mA  
rr  
F
V
F1  
Ct  
t
fr  
I = 100 mA  
I
VR = 0 V  
F = 1 MHz  
F
R1  
I = 500 mA  
F
R = 100 ohms  
(Note 1)  
VR = 40 V  
L
PART  
NUMBER  
V
μA  
pF  
ns  
ns  
6507A  
1
0.1  
8.0  
40  
20  
NOTE 1: Pulsed: PW = 300 us +/- 50 µs, duty cycle <2%, 90 µs after leading edge.  
Copyright © 2007  
3-27-2007  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

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