5秒后页面跳转
MX2N4092 PDF预览

MX2N4092

更新时间: 2024-01-07 04:06:06
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体管
页数 文件大小 规格书
2页 38K
描述
Small Signal Field-Effect Transistor, TO-18, TO-18, 3 PIN

MX2N4092 技术参数

是否Rohs认证: 不符合生命周期:Active
零件包装代码:BCY包装说明:CYLINDRICAL, O-MBCY-W3
针数:3Reach Compliance Code:compliant
风险等级:5.62配置:SINGLE
最小漏源击穿电压:40 V最大漏源导通电阻:50 Ω
FET 技术:JUNCTION最大反馈电容 (Crss):5 pF
JEDEC-95代码:TO-206AAJESD-30 代码:O-MBCY-W3
元件数量:1端子数量:3
工作模式:DEPLETION MODE最高工作温度:175 °C
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:N-CHANNEL
认证状态:Not Qualified参考标准:MIL-19500
表面贴装:NO端子形式:WIRE
端子位置:BOTTOM晶体管元件材料:SILICON
Base Number Matches:1

MX2N4092 数据手册

 浏览型号MX2N4092的Datasheet PDF文件第2页 
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
N-CHANNEL J-FET  
Equivalent To MIL-PRF-19500/431  
DEVICES  
LEVELS  
2N4091  
2N4092  
2N4093  
MQ = JAN Equivalent  
MX = JANTX Equivalent  
MV = JANTXV Equivalent  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Gate-Source Voltage  
Symbol  
VGS  
VDS  
VDG  
IG  
Value  
Unit  
V
-40  
40  
Drain-Source Voltage  
Drain-Gate Voltage  
V
40  
V
Gate Current  
10  
mAdc  
W
Power Dissipation(1)  
TA = +25°C  
PT  
0.36  
Operating Junction  
Tj  
-65 to +175  
-65 to +200  
°C  
Operating Storage Temperature Range  
Tstg  
°C  
(1) Derate linearly 2.4 mW/°C for TA > 25°C.  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
TO-18  
(TO-206AA)  
Parameters / Test Conditions  
Symbol  
Min.  
Max.  
Unit  
Gate-Source Breakdown Voltage  
VDS = 0, IG = -1.0μA dc  
V(BR)GSS  
-40  
Vdc  
Gate Reverse Current  
VDS = 0, VGS = -20V dc  
IGSS  
-0.1  
-0.1  
ηA  
ηA  
Drain Current  
VGS = -12V dc, VDS = 20V dc  
VGS = -8.0V dc, VDS = 20V dc  
2N4091  
2N4092  
2N4093  
ID(off)  
VGS = -6.0V dc, VDS = 20V dc  
Drain Current  
VGS = 0, VDS = 20V dc  
2N4091  
2N4092  
2N4093  
30  
15  
8.0  
IDSS  
mA  
Vdc  
Ω
Drain-Source On-State Voltage  
VGS = 0, ID = 6.6mA dc  
VGS = 0, ID = 4.0mA dc  
2N4091  
2N4092  
2N4093  
0.2  
0.2  
0.2  
VDS(on)  
VGS = 0, ID = 2.5mA dc  
Static Drain-Source On-State Resistance  
VGS = 0, ID = 1.0mA dc  
2N4091  
2N4092  
2N4093  
30  
50  
80  
rDS(on)  
T4-LDS-0007 Rev. 1 (063388)  
Page 1 of 2  

与MX2N4092相关器件

型号 品牌 获取价格 描述 数据表
MX2N4093 MICROSEMI

获取价格

Small Signal Field-Effect Transistor, TO-18, TO-18, 3 PIN
MX2N4416A MICROSEMI

获取价格

Small Signal Field-Effect Transistor, TO-72, TO-72, 4 PIN
MX2N4856 MICROSEMI

获取价格

Small Signal Field-Effect Transistor, 40V, 1-Element, N-Channel, Silicon, Junction FET, TO
MX2N4857 MICROSEMI

获取价格

Small Signal Field-Effect Transistor, 40V, 1-Element, N-Channel, Silicon, Junction FET, TO
MX2N4858 MICROSEMI

获取价格

Small Signal Field-Effect Transistor, 40V, 1-Element, N-Channel, Silicon, Junction FET, TO
MX2N4859 MICROSEMI

获取价格

Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Junction FET, TO
MX2N4860 MICROSEMI

获取价格

Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Junction FET, TO
MX2N4861 MICROSEMI

获取价格

Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Junction FET, TO
MX2N5114 MICROSEMI

获取价格

Power Field-Effect Transistor, TO-18, TO-18, 3 PIN
MX2N5114UB MICROSEMI

获取价格

Small Signal Field-Effect Transistor, P-Channel, Junction FET