是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | BCY |
包装说明: | CYLINDRICAL, O-MBCY-W3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.65 |
配置: | SINGLE | 最小漏源击穿电压: | 40 V |
最大漏源导通电阻: | 60 Ω | FET 技术: | JUNCTION |
最大反馈电容 (Crss): | 8 pF | JEDEC-95代码: | TO-206AA |
JESD-30 代码: | O-MBCY-W3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | DEPLETION MODE | 最高工作温度: | 200 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
参考标准: | MIL-19500/385 | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | WIRE |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MX2N4859 | MICROSEMI |
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Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Junction FET, TO | |
MX2N4860 | MICROSEMI |
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Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Junction FET, TO | |
MX2N4861 | MICROSEMI |
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Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Junction FET, TO | |
MX2N5114 | MICROSEMI |
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Power Field-Effect Transistor, TO-18, TO-18, 3 PIN | |
MX2N5114UB | MICROSEMI |
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Small Signal Field-Effect Transistor, P-Channel, Junction FET | |
MX2N5115 | MICROSEMI |
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Power Field-Effect Transistor, TO-18, TO-18, 3 PIN | |
MX2N5116 | MICROSEMI |
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Power Field-Effect Transistor, TO-18, TO-18, 3 PIN | |
MX2N5116UB | MICROSEMI |
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Small Signal Field-Effect Transistor, P-Channel, Junction FET | |
MX2P46D4T-02 | TELEDYNE |
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2-Pole or 3-Pole 4A 460 Vac DIN-Rail SSR | |
MX2RAAB29M999 | MERITEK |
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Quartz Crystal, |