Datasheet > MX2N5114

MX2N5114

更新时间： 2024-10-01 19:57:23

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
2页	40K
描述
Power Field-Effect Transistor, TO-18, TO-18, 3 PIN

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技术参数
数据手册

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MX2N5114 技术参数

是否Rohs认证：	不符合	生命周期：	Active
零件包装代码：	BCY	包装说明：	CYLINDRICAL, O-MBCY-W3
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.71
JEDEC-95代码：	TO-18	JESD-30 代码：	O-MBCY-W3
端子数量：	3	封装主体材料：	METAL
封装形状：	ROUND	封装形式：	CYLINDRICAL
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	WIRE	端子位置：	BOTTOM
Base Number Matches：	1

MX2N5114 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

P-CHANNEL J-FET

Equivalent To MIL-PRF-19500/476

DEVICES

LEVELS

2N5114

2N5115

2N5116

MQ = JAN Equivalent

MX = JANTX Equivalent

MV = JANTXV Equivalent

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

Parameters / Test Conditions

Gate-Source Voltage ⁽¹⁾

Symbol

V_GS

V_DS

V_DG

I_G

All Devices

Unit

Vdc

mAdc

Drain-Source Voltage ⁽¹⁾

Drain-Gate Voltage

Gate Current

T_A= +25°C ⁽²⁾

P_T

0.500

-65 to +200

Power Dissipation

Storage Temperature Range

T_stg

°C

(1) Symmetrical geometry allows operation of those units with source / drain leads interchanged.

(2) Derate linearly 3.0 mW/°C for T_A> 25°C.

TO-18

(TO-206AA)

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

Gate-Source Breakdown Voltage

V_(BR)GSS

Vdc

V_DS= 0, I_G= 1.0 μA dc

Drain-Source “On” State Voltage

V_GS= 0V dc, I_D= -15mA dc

2N5114

2N5115

2N5116

-1.3

-0.8

-0.6

V_GS= 0V dc, I_D= -7.0mA dc

V_DS(on)

Vdc

pAdc

V_GS= 0V dc, I_D= -3.0mA dc

Gate Reverse Current

V_DS= 0, V_GS= 20V dc

I_GSS

500

Drain Current Cutoff

V_GS= 12V dc, V_DS= -15V dc

2N5114

2N5115

2N5116

-500

V_GS= 7.0V dc, V_DS= -15V dc

I_D(off)

V_GS= 5.0V dc, V_DS= -15V dc

Zero Gate Voltage Drain Current

V_GS= 0, V_DS= -18V dc

V_GS= 0, V_DS= -15V dc

2N5114

2N5115

2N5116

-30

-15

-5.0

-90

-60

-25

I_DSS

mAdc

Vdc

V_GS= 0, V_DS= -15V dc

Gate-Source Cutoff

V_DS= -15, I_D= -1.0nA dc

2N5114

2N5115

2N5116

5.0

3.0

1.0

6.0

4.0

V_GS(off)

T4-LDS-0006 Rev. 1 (063387)

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