Datasheet > MX29LV081BTC-90

MX29LV081BTC-90

更新时间： 2024-11-08 05:21:47

品牌	Logo	应用领域
旺宏电子 - Macronix		/
页数	文件大小	规格书
51页	335K
描述
8M-BIT [1M x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MX29LV081BTC-90 数据手册

MX29LV081B

8M-BIT[1Mx8]CMOSSINGLEVOLTAGE

3VONLYEQUALSECTORFLASHMEMORY

FEATURES

• Extended single - supply voltage range 2.7V to 3.6V

• 1,048,576 x 8

• Singlepowersupplyoperation

• Status Reply

-Datapolling&Togglebitfordetectionofprogramand

eraseoperationcompletion.

- 3.0V only operation for read, erase and program

operation

• Fast access time: 70/90ns

• Ready/Busy pin (RY/BY)

-Providesahardwaremethodofdetectingprogramor

eraseoperationcompletion.

• Lowpowerconsumption

• Sectorprotection

- 20mA maximum active current

- 0.2uA typical standby current

- Hardware method to disable any combination of

sectors from program or erase operations

-Anycombinationofsectorscanbeerasedwitherase

suspend/resumefunction.

-Temporarysectorunprotectallowscodechangesin

previously locked sectors.

• Fully compatible with MX29LV081 device

• Commandregisterarchitecture

- Byte/word Programming (7us/12us typical)

- Sector Erase (Sector structure 64K-Byte x16)

• Auto Erase (chip & sector) and Auto Program

-Automaticallyeraseanycombinationofsectorswith

Erase Suspend capability.

• 100,000minimumerase/programcycles

• Latch-up protected to 100mA from -1V to VCC+1

• Package type:

- Automatically program and verify data at specified

address

• Erasesuspend/EraseResume

- 40-pin TSOP

• Compatibility with JEDEC standard

- Pinout and software compatible with single-power

supply Flash

- Suspends sector erase operation to read data from,

orprogramdatato,any sectorthatisnotbeingerased,

then resumes the erase.

• 20 years data retention

GENERAL DESCRIPTION

The MX29LV081B is a 8-mega bit Flash memory orga-

nized as 1M bytes of 8 bits. MXIC's Flash memories

offer the most cost-effective and reliable read/write non-

volatile random access memory. The MX29LV081B is

packaged in 40-pin TSOP. It is designed to be repro-

grammed and erased in system or in standard EPROM

programmers.

during erase and programming, while maintaining maxi-

mum EPROM compatibility.

MXIC Flash technology reliably stores memory contents

even after 100,000 erase and program cycles. The MXIC

cell is designed to optimize the erase and programming

mechanisms. In addition, the combination of advanced

tunnel oxide processing and low internal electric fields

for erase and program operations produces reliable cy-

cling. The MX29LV081B uses a 2.7V~3.6VVCC supply

to perform the High Reliability Erase and auto Program/

Erase algorithms.

The standard MX29LV081B offers access time as fast

as 70ns, allowing operation of high-speed microproces-

sors without wait states. To eliminate bus contention,

the MX29LV081B has separate chip enable (CE) and

output enable (OE) controls.

The highest degree of latch-up protection is achieved

with MXIC's proprietary non-epi process. Latch-up pro-

tection is proved for stresses up to 100 milliamps on

address and data pin from -1V to VCC + 1V.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29LV081B uses a command register to manage this

functionality. The command register allows for 100%

TTL level control inputs and fixed power supply levels

P/N:PM1115

REV. 1.1, DEC. 20, 2004

12 3 4 5 6 7...51

中文翻译

下载PDF

与MX29LV081BTC-90相关器件

型号	品牌	获取价格	描述	数据表
MX29LV081BTC-90G	Macronix	获取价格	Flash, 1MX8, 90ns, PDSO40, 10 X 20 MM, ROHS COMPLIANT, MO-142, TSOP1-40
MX29LV081BTI-70	Macronix	获取价格	8M-BIT [1M x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY
MX29LV081BTI-70G	Macronix	获取价格	Flash, 1MX8, 70ns, PDSO40, 10 X 20 MM, ROHS COMPLIANT, MO-142, TSOP1-40
MX29LV081BTI-90	Macronix	获取价格	8M-BIT [1M x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY
MX29LV081BTI-90G	Macronix	获取价格	Flash, 1MX8, 90ns, PDSO40, 10 X 20 MM, ROHS COMPLIANT, MO-142, TSOP1-40
MX29LV081TC-70	Macronix	获取价格	8M-BIT [1M x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY
MX29LV081TC-90	Macronix	获取价格	8M-BIT [1M x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY
MX29LV081TI-70	Macronix	获取价格	8M-BIT [1M x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY
MX29LV081TI-90	Macronix	获取价格	8M-BIT [1M x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY
MX29LV128D	Macronix	获取价格	128M-BIT [16M x 8/8M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY

与MX29LV081BTC-90相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

21
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

19
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

44
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

38

产品中心

服务支持

精选活动

关于我们

帮助中心

MX29LV081BTC-90

MX29LV081BTC-90 数据手册

与MX29LV081BTC-90相关器件

与MX29LV081BTC-90相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MX29LV081BTC-90

MX29LV081BTC-90 数据手册

与MX29LV081BTC-90相关器件

与MX29LV081BTC-90相关文章

您还可以找

您在本页遇到什么问题？