PRELIMINARY
MX29LV081
8M-BIT[1Mx8]CMOSSINGLEVOLTAGE
3VONLYEQUALSECTORFLASHMEMORY
FEATURES
• Extended single - supply voltage range 2.7V to 3.6V
• 1,048,576 x 8
• Singlepowersupplyoperation
• Status Reply
-Datapolling&Togglebitfordetectionofprogramand
eraseoperationcompletion.
- 3.0V only operation for read, erase and program
operation
• Fast access time: 70/90ns
• Ready/Busy pin (RY/BY)
-Providesahardwaremethodofdetectingprogramor
eraseoperationcompletion.
• Lowpowerconsumption
• Sectorprotection
- 20mA maximum active current
- 0.2uA typical standby current
- Hardware method to disable any combination of
sectors from program or erase operations
-Anycombinationofsectorscanbeerasedwitherase
suspend/resumefunction.
- Tempoary sector unprotect allows code changes in
previously locked sectors.
• Commandregisterarchitecture
- Byte/word Programming (7us/12us typical)
- Sector Erase (Sector structure 64K-Byte x16)
• Auto Erase (chip & sector) and Auto Program
-Automaticallyeraseanycombinationofsectorswith
Erase Suspend capability.
• 100,000minimumerase/programcycles
• Latch-up protected to 100mA from -1V to VCC+1
• Low VCC write inhibit is equal to or less than 2.3V
• Package type:
- Automatically program and verify data at specified
address
• Erasesuspend/EraseResume
- Suspends sector erase operation to read data from,
orprogramdatato,any sectorthatisnotbeingerased,
then resumes the erase.
- 40-pin TSOP
• Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
GENERAL DESCRIPTION
The MX29LV081 is a 8-mega bit Flash memory orga-
nized as 1M bytes of 8 bits. MXIC's Flash memories
offer the most cost-effective and reliable read/write non-
volatile random access memory. The MX29LV081 is
packaged in 40-pin TSOP. It is designed to be repro-
grammed and erased in system or in standard EPROM
programmers.
during erase and programming, while maintaining maxi-
mum EPROM compatibility.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cy-
cling. The MX29LV081 uses a 2.7V~3.6V VCC supply
to perform the High Reliability Erase and auto Program/
Erase algorithms.
The standard MX29LV081 offers access time as fast as
70ns, allowing operation of high-speed microprocessors
without wait states. To eliminate bus contention, the
MX29LV081 has separate chip enable (CE) and output
enable (OE) controls.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up pro-
tection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC + 1V.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29LV081 uses a command register to manage this
functionality. The command register allows for 100%
TTL level control inputs and fixed power supply levels
P/N:PM0717
REV. 1.0, JUL. 31, 2001
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