Datasheet > MX29F400TMC-12

MX29F400TMC-12

更新时间： 2024-09-20 22:54:35

品牌	Logo	应用领域
旺宏电子 - Macronix		/
页数	文件大小	规格书
44页	710K
描述
4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MX29F400TMC-12 数据手册

MX29F400T/B

4M-BIT[512Kx8/256Kx16]CMOSFLASHMEMORY

FEATURES

• 524,288 x 8/262,144 x 16 switchable

• Singlepowersupplyoperation

erase cycle completion.

• Ready/Busy pin (RY/BY)

- 5.0V only operation for read, erase and program

operation

-Providesahardwaremethodofdetectingprogramor

erase cycle completion.

• Fast access time: 55/70/90/120ns

• Lowpowerconsumption

- Sector protect/unprotect for 5V only system or 5V/

12V system.

- 40mA maximum active current(5MHz)

- 1uA typical standby current

• Commandregisterarchitecture

- Byte/word Programming (7us/12us typical)

- Sector Erase (Sector structure 16K-Bytex1, 8K-

Bytex2, 32K-Bytex1, and 64K-Byte x7)

• Auto Erase (chip & sector) and Auto Program

-Automaticallyeraseanycombinationofsectorswith

Erase Suspend capability.

• Sectorprotection

- Hardware method to disable any combination of

sectors from program or erase operations

• 100,000minimumerase/programcycles

• Latch-up protected to 100mA from -1V to VCC+1V

• Boot Code Sector Architecture

- T = Top Boot Sector

- B = Bottom Boot Sector

• Low VCC write inhibit is equal to or less than 3.2V

• Package type:

- Automatically program and verify data at specified

address

- 44-pin SOP

• Erasesuspend/EraseResume

- 48-pin TSOP

- Suspends an erase operation to read data from, or

program data to, another sector that is not being

erased, then resumes the erase.

• Compatibility with JEDEC standard

- Pinout and software compatible with single-power

supply Flash

• Status Reply

• 20 years data retention

-Datapolling&Togglebitfordetectionofprogramand

GENERAL DESCRIPTION

The MX29F400T/B is a 4-mega bit Flash memory orga-

nized as 512K bytes of 8 bits or 256K words of 16 bits.

MXIC's Flash memories offer the most cost-effective

and reliable read/write non-volatile random access

memory. The MX29F400T/B is packaged in 44-pin SOP,

48-pin TSOP. It is designed to be reprogrammed and

erased in system or in standard EPROM programmers.

TTL level control inputs and fixed power supply levels

during erase and programming, while maintaining maxi-

mum EPROM compatibility.

MXIC Flash technology reliably stores memory contents

even after 100,000 erase and program cycles. The MXIC

cell is designed to optimize the erase and programming

mechanisms. In addition, the combination of advanced

tunnel oxide processing and low internal electric fields

for erase and program operations produces reliable cy-

cling. The MX29F400T/B uses a 5.0V±10% VCC sup-

ply to perform the High Reliability Erase and auto Pro-

gram/Erase algorithms.

The standard MX29F400T/B offers access time as fast

as 55ns, allowing operation of high-speed microproces-

sors without wait states. To eliminate bus contention,

the MX29F400T/B has separate chip enable (CE) and

output enable (OE) controls.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29F400T/B uses a command register to manage this

functionality. The command register allows for 100%

The highest degree of latch-up protection is achieved

with MXIC's proprietary non-epi process. Latch-up pro-

tection is proved for stresses up to 100 milliamps on

address and data pin from -1V to VCC + 1V.

P/N:PM0439

REV. 1.6 , NOV. 12, 2001

12 3 4 5 6 7...44

中文翻译

下载PDF

与MX29F400TMC-12相关器件

型号	品牌	获取价格	描述	数据表
MX29F400TMC-55	Macronix	获取价格	4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY
MX29F400TMC-70	Macronix	获取价格	4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY
MX29F400TMC-90	Macronix	获取价格	4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY
MX29F400TMI-12	Macronix	获取价格	Flash, 256KX16, 120ns, PDSO44, 0.500 INCH, PLASTIC, MO-175, SOP-44
MX29F400TMI-55	Macronix	获取价格	Flash, 256KX16, 55ns, PDSO44, 0.500 INCH, PLASTIC, MO-175, SOP-44
MX29F400TTA-12	Macronix	获取价格	4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY
MX29F400TTA-90	Macronix	获取价格	4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY
MX29F400TTC-12	Macronix	获取价格	4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY
MX29F400TTC12G	Macronix	获取价格	256KX16 FLASH 5V PROM, 120ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP1-48
MX29F400TTC-12G	Macronix	获取价格	暂无描述

与MX29F400TMC-12相关文章

摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

63
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

60
SL74HC10N：高性能三输入与非门解析
2024-09-03

133
AIC1781A 电池充电控制器深度解析
2024-09-03

129

产品中心

服务支持

精选活动

关于我们

帮助中心

MX29F400TMC-12

MX29F400TMC-12 数据手册

与MX29F400TMC-12相关器件

与MX29F400TMC-12相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MX29F400TMC-12

MX29F400TMC-12 数据手册

与MX29F400TMC-12相关器件

与MX29F400TMC-12相关文章

您还可以找

您在本页遇到什么问题？