5秒后页面跳转
MX29F400TTC12G PDF预览

MX29F400TTC12G

更新时间: 2024-09-21 14:54:03
品牌 Logo 应用领域
旺宏电子 - Macronix 可编程只读存储器ISM频段光电二极管内存集成电路
页数 文件大小 规格书
45页 719K
描述
256KX16 FLASH 5V PROM, 120ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP1-48

MX29F400TTC12G 数据手册

 浏览型号MX29F400TTC12G的Datasheet PDF文件第2页浏览型号MX29F400TTC12G的Datasheet PDF文件第3页浏览型号MX29F400TTC12G的Datasheet PDF文件第4页浏览型号MX29F400TTC12G的Datasheet PDF文件第5页浏览型号MX29F400TTC12G的Datasheet PDF文件第6页浏览型号MX29F400TTC12G的Datasheet PDF文件第7页 
MX29F400T/B  
4M-BIT[512Kx8/256Kx16]CMOSFLASHMEMORY  
FEATURES  
• 524,288 x 8/262,144 x 16 switchable  
• Singlepowersupplyoperation  
erase cycle completion.  
• Ready/Busy pin (RY/BY)  
- 5.0V only operation for read, erase and program  
operation  
-Providesahardwaremethodofdetectingprogramor  
erase cycle completion.  
• Fast access time: 55/70/90/120ns  
• Lowpowerconsumption  
- Sector protect/unprotect for 5V only system or 5V/  
12V system.  
- 40mA maximum active current(5MHz)  
- 1uA typical standby current  
• Commandregisterarchitecture  
- Byte/word Programming (7us/12us typical)  
- Sector Erase (Sector structure 16K-Bytex1, 8K-  
Bytex2, 32K-Bytex1, and 64K-Byte x7)  
• Auto Erase (chip & sector) and Auto Program  
-Automaticallyeraseanycombinationofsectorswith  
Erase Suspend capability.  
• Sectorprotection  
- Hardware method to disable any combination of  
sectors from program or erase operations  
• 100,000minimumerase/programcycles  
• Latch-up protected to 100mA from -1V to VCC+1V  
• Boot Code Sector Architecture  
- T = Top Boot Sector  
- B = Bottom Boot Sector  
• Low VCC write inhibit is equal to or less than 3.2V  
• Package type:  
- Automatically program and verify data at specified  
address  
- 44-pin SOP  
• Erasesuspend/EraseResume  
- 48-pin TSOP  
- Suspends an erase operation to read data from, or  
program data to, another sector that is not being  
erased, then resumes the erase.  
• Compatibility with JEDEC standard  
- Pinout and software compatible with single-power  
supply Flash  
• Status Reply  
• 20 years data retention  
-Datapolling&Togglebitfordetectionofprogramand  
GENERAL DESCRIPTION  
The MX29F400T/B is a 4-mega bit Flash memory orga-  
nized as 512K bytes of 8 bits or 256K words of 16 bits.  
MXIC's Flash memories offer the most cost-effective  
and reliable read/write non-volatile random access  
memory. The MX29F400T/B is packaged in 44-pin SOP,  
48-pin TSOP. It is designed to be reprogrammed and  
erased in system or in standard EPROM programmers.  
TTL level control inputs and fixed power supply levels  
during erase and programming, while maintaining maxi-  
mum EPROM compatibility.  
MXIC Flash technology reliably stores memory contents  
even after 100,000 erase and program cycles. The MXIC  
cell is designed to optimize the erase and programming  
mechanisms. In addition, the combination of advanced  
tunnel oxide processing and low internal electric fields  
for erase and program operations produces reliable cy-  
cling. The MX29F400T/B uses a 5.0V±10% VCC sup-  
ply to perform the High Reliability Erase and auto Pro-  
gram/Erase algorithms.  
The standard MX29F400T/B offers access time as fast  
as 55ns, allowing operation of high-speed microproces-  
sors without wait states. To eliminate bus contention,  
the MX29F400T/B has separate chip enable (CE) and  
output enable (OE) controls.  
MXIC's Flash memories augment EPROM functionality  
with in-circuit electrical erasure and programming. The  
MX29F400T/B uses a command register to manage this  
functionality. The command register allows for 100%  
The highest degree of latch-up protection is achieved  
with MXIC's proprietary non-epi process. Latch-up pro-  
tection is proved for stresses up to 100 milliamps on  
address and data pin from -1V to VCC + 1V.  
P/N:PM0439  
REV. 1.9 , APR. 03, 2002  
1

与MX29F400TTC12G相关器件

型号 品牌 获取价格 描述 数据表
MX29F400TTC-12G Macronix

获取价格

暂无描述
MX29F400TTC-55 Macronix

获取价格

4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY
MX29F400TTC-55G Macronix

获取价格

暂无描述
MX29F400TTC-70 Macronix

获取价格

4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY
MX29F400TTC-70G Macronix

获取价格

Flash, 256KX16, 70ns, PDSO48, 12 X 20 MM, PLASTIC, MO-142, TSOP1-48
MX29F400TTC-90 Macronix

获取价格

4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY
MX29F400TTC-90G Macronix

获取价格

Flash, 256KX16, 90ns, PDSO48, 12 X 20 MM, PLASTIC, MO-142, TSOP1-48
MX29F400TTI55G Macronix

获取价格

Flash, 256KX16, 55ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP1-48
MX29F400TTI70G Macronix

获取价格

Flash, 256KX16, 70ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP1-48
MX29F400TTI90G Macronix

获取价格

Flash, 256KX16, 90ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP1-48