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MX29F400CTMI-12G PDF预览

MX29F400CTMI-12G

更新时间: 2024-11-04 14:43:51
品牌 Logo 应用领域
旺宏电子 - Macronix 光电二极管内存集成电路
页数 文件大小 规格书
46页 455K
描述
Flash, 256KX16, 120ns, PDSO44, 0.500 INCH, LEAD FREE, MO-175, SOP-44

MX29F400CTMI-12G 数据手册

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ADVANCED INFORMATION  
MX29F400CT/CB  
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE  
5V ONLY BOOT SECTOR FLASH MEMORY  
FEATURES  
• 524,288 x 8/262,144 x 16 switchable  
• Singlepowersupplyoperation  
- Data# Polling & Toggle bit for detection of program  
and erase cycle completion.  
- 5.0V only operation for read, erase and program  
operation  
• Fast access time: 70/90/120ns  
• CompatiblewithMX29F400T/Bdevice  
• Lowpowerconsumption  
• Ready/Busy pin (RY/BY#)  
-Providesahardwaremethodofdetectingprogramor  
erase cycle completion.  
- Sector protect/unprotect for 5V only system or 5V/  
12V system.  
- 40mA maximum active current(5MHz)  
- 1uA typical standby current  
• Commandregisterarchitecture  
- Byte/word Programming (9us/11us typical)  
- Sector Erase (Sector structure 16K-Bytex1, 8K-  
Bytex2, 32K-Bytex1, and 64K-Byte x7)  
• Auto Erase (chip & sector) and Auto Program  
-Automaticallyeraseanycombinationofsectorswith  
Erase Suspend capability.  
• Sectorprotection  
- Hardware method to disable any combination of  
sectors from program or erase operations  
• 100,000minimumerase/programcycles  
• Latch-up protected to 100mA from -1V to VCC+1V  
• Boot Code Sector Architecture  
- T = Top Boot Sector  
- B = Bottom Boot Sector  
• Low VCC write inhibit is equal to or less than 3.2V  
• Package type:  
- Automatically program and verify data at specified  
address  
- 44-pin SOP  
• Erasesuspend/EraseResume  
- 48-pin TSOP  
- Suspends an erase operation to read data from, or  
program data to, another sector that is not being  
erased, then resumes the erase.  
• Compatibility with JEDEC standard  
- Pinout and software compatible with single-power  
supply Flash  
• Status Reply  
• 20 years data retention  
GENERAL DESCRIPTION  
The MX29F400CT/CB is a 4-mega bit Flash memory  
organized as 512K bytes of 8 bits or 256K words of 16  
bits. MXIC's Flash memories offer the most cost-effec-  
tive and reliable read/write non-volatile random access  
memory. The MX29F400CT/CB is packaged in 44-pin  
SOP, 48-pin TSOP. It is designed to be reprogrammed  
and erased in system or in standard EPROM program-  
mers.  
TTL level control inputs and fixed power supply levels  
during erase and programming, while maintaining maxi-  
mum EPROM compatibility.  
MXIC Flash technology reliably stores memory contents  
even after 100,000 erase and program cycles. The MXIC  
cell is designed to optimize the erase and programming  
mechanisms. In addition, the combination of advanced  
tunnel oxide processing and low internal electric fields  
for erase and program operations produces reliable cy-  
cling. The MX29F400CT/CB uses a 5.0V±10%VCC sup-  
ply to perform the High Reliability Erase and auto Pro-  
gram/Erase algorithms.  
The standard MX29F400CT/CB offers access time as  
fast as 70ns, allowing operation of high-speed micropro-  
cessors without wait states. To eliminate bus conten-  
tion, the MX29F400CT/CB has separate chip enable  
(CE#) and output enable (OE#) controls.  
The highest degree of latch-up protection is achieved  
with MXIC's proprietary non-epi process. Latch-up pro-  
tection is proved for stresses up to 100 milliamps on  
address and data pin from -1V to VCC + 1V.  
MXIC's Flash memories augment EPROM functionality  
with in-circuit electrical erasure and programming. The  
MX29F400CT/CB uses a command register to manage  
this functionality. The command register allows for 100%  
P/N:PM1200  
REV. 0.02 , APR. 15, 2005  
1

MX29F400CTMI-12G 替代型号

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