5秒后页面跳转
MX25L51245J PDF预览

MX25L51245J

更新时间: 2024-04-09 18:59:36
品牌 Logo 应用领域
旺宏电子 - Macronix /
页数 文件大小 规格书
109页 1397K
描述
DTR, QPI, Suspend/Resume, Advanced Protection, H/W Reset

MX25L51245J 数据手册

 浏览型号MX25L51245J的Datasheet PDF文件第3页浏览型号MX25L51245J的Datasheet PDF文件第4页浏览型号MX25L51245J的Datasheet PDF文件第5页浏览型号MX25L51245J的Datasheet PDF文件第7页浏览型号MX25L51245J的Datasheet PDF文件第8页浏览型号MX25L51245J的Datasheet PDF文件第9页 
MX25L51245J  
2. GENERAL DESCRIPTION  
MX25L51245J is 512Mb bits Serial NOR Flash memory, which is configured as 67,108,864 x 8 internally. When  
it is in two or four I/O mode, the structure becomes 268,435,456 bits x 2 or 134,217,728 bits x 4. MX25L51245J  
features a serial peripheral interface and software protocol allowing operation on a simple 3-wire bus while it is in  
single I/O mode. The three bus signals are a clock input (SCLK), a serial data input (SI), and a serial data output (SO).  
Serial access to the device is enabled by CS# input.  
When it is in two I/O read mode, the SI pin and SO pin become SIO0 pin and SIO1 pin for address/dummy bits  
input and data output. When it is in four I/O read mode, the SI pin, SO pin, WP# and RESET# pin (of the 8-pin  
package) become SIO0 pin, SIO1 pin, SIO2 pin and SIO3 pin for address/dummy bits input and data output.  
The MX25L51245J MXSMIO(Serial Multi I/O) provides sequential read operation on whole chip.  
After program/erase command is issued, auto program/erase algorithms which program/erase and verify the  
specified page or sector/block locations will be executed. Program command is executed on byte basis, or page (256  
bytes) basis, or word basis for erase command is executed on 4K-byte sector, 32K-byte block, or 64K-byte block,  
or whole chip basis.  
To provide user with ease of interface, a status register is included to indicate the status of the chip. The status read  
command can be issued to detect completion status of a program or erase operation via WIP bit.  
Advanced security features enhance the protection and security functions, please refer to the security features  
section for more details.  
When the device is not in operation and CS# is high, it will remain in standby mode.  
The MX25L51245J utilizes Macronix's proprietary memory cell, which reliably stores memory contents even after  
100,000 program and erase cycles.  
Table 1. Read performance Comparison  
Numbers  
of Dummy  
Cycles  
Dual Output Quad Output  
Dual IO  
Fast Read  
(MHz)  
Quad IO  
Fast Read  
(MHz)  
Quad I/O DT  
Read  
Fast Read  
(MHz)  
Fast Read  
(MHz)  
Fast Read  
(MHz)  
(MHz)  
4
6
-
-
-
80*  
54  
70*  
-
-
-
-
-
54*  
8
120*/133R  
-
120*/133R  
-
104/114R  
-
104/114R  
-
84/95R  
104/114R  
70/80R  
84/100R  
10  
Notes:  
1. * Default Status.  
2. R mean VCC range = 3.0V-3.6V.  
P/N: PM2988  
Macronix Proprietary  
Rev. 1.1, April 06, 2023  
6

与MX25L51245J相关器件

型号 品牌 描述 获取价格 数据表
MX25L512CMI-12G Macronix Flash, 5MX1, PDSO8, 0.150 INCH, ROHS COMPLIAT, MS-012, SOP-8

获取价格

MX25L512COI-12G Macronix Flash, 5MX1, PDSO8, 0.173 INCH, ROHS COMPLIANT, MO-153, TSSOP-8

获取价格

MX25L512CZUI-12G Macronix Flash, 5MX1, PDSO8, 2 X 3 MM, 0.6 MM HIGHT, 0.50 MM PITCH, ROHS COMPLIANT, MO-252, USON-8

获取价格

MX25L512E Macronix MX25L512E

获取价格

MX25L512EMI10G Macronix MX25L512E

获取价格

MX25L512EMI-10G Macronix 512K-BIT [x 1/x 2] CMOS SERIAL FLASH

获取价格