Datasheet > MWS11

MWS11

更新时间： 2024-10-27 22:29:43

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
6页	79K
描述
InGaP HBT Gain Block

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中文翻译

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数据手册

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MWS11 数据手册

C O N F I D E N T I A L

MWS11-GB11-xx

InGaP HBT Gain Block

M I C R O S E M I

C O M P A N Y

PREVIEW

This general purpose amplifier is a low

cost, broadband RFIC manufactured with available in

This RFIC amplifier is initially

plastic SOT-89 3-Pin

Advanced InGaP HBT

DC to 6GHz

Single +5V Supply

Small Signal Gain = 16dB

P1dB = 19dBm (5V),

f=1GHz

SOT-89 3-Pin, & Gigamite

Packages

an InGaP/GaAs Heterojunction Bipolar package to handle P1dB output power up

Transistor (HBT) process (MOCVD). to 19dBm (5V). The same RFIC will be

This RFIC amplifier was designed as an available later in an advanced Microsemi

easily cascadable 50 ohm gain block. The Gigamite™ package, with significantly

device is self-contained with 50 ohm input smaller footprint for applications where

and output impedance. Applications in- board space is at a premium.

clude IF and RF amplification in wireless/

Mcrosemi

wired voice and data communication

products and broadband test equipment

operating up to 6 GHz.

Broadband Gain Blocks

IF or RF buffer Amplifiers

Driver Stage for Power

Amps

Final Power Amp for Low to

Medium Power Applications

Broadband Test Equipment

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

4 5

f = 5 . 7 G H z

V c c = 5 V

N o m in a l C u r re n t

4 0

3 5

2 0 m A

3 0

2 5

2 0

1 5

1 0

-5

-1 0

-2 0

-1 5

-1 0

-5

1 0

1 5

P o u t

P in (d B m )

G a in

C u rre n t

Plastic SOT-89

3 Pin

Gigamite

MWS11GB11-S1

MWS11GB11-G1

Note: Available in Tape & Reel.

Append the letter “T” to the part number. (i.e. MSW11GB11-S89T)

Rev. 0.2,2000-12-15

Microsemi

Page 1

11861 Western Avenue, Garden Grove, CA. 92841. Tel: (714) 898-8121

12 3 4 5 6

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