Datasheet > MVPLAD30KP130C

MVPLAD30KP130C

更新时间： 2024-11-14 10:04:15

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网二极管
页数	文件大小	规格书
5页	268K
描述
Trans Voltage Suppressor Diode, 30000W, 130V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC PACKAGE-1

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MVPLAD30KP130C 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	PLASTIC PACKAGE-1	针数：	1
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.85
Is Samacsys：	N	最大击穿电压：	176 V
最小击穿电压：	144 V	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：	S-PSSO-G1	JESD-609代码：	e0
湿度敏感等级：	1	最大非重复峰值反向功率耗散：	30000 W
元件数量：	1	端子数量：	1
封装主体材料：	PLASTIC/EPOXY	封装形状：	SQUARE
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性：	BIDIRECTIONAL	最大功率耗散：	2.5 W
认证状态：	Not Qualified	最大重复峰值反向电压：	130 V
表面贴装：	YES	技术：	AVALANCHE
端子面层：	TIN LEAD	端子形式：	GULL WING
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

MVPLAD30KP130C 数据手册

PLAD30KP10 thru PLAD30KP400CA, e3

30kW Surface Mount Transient

Voltage Suppressor

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

These Microsemi 30 kW Transient Voltage Suppressors (TVSs)

are designed for applications requiring protection of voltage-

sensitive electronic devices that may be damaged by harsh or

severe voltage transients including lightning per IEC61000-4-5

and class levels with various source impedances described

herein. This series is available in 10 to 400 volt Standoff

Voltages (V_WM) in both unidirectional and bi-directional with either

5% or 10% tolerances of the Breakdown Voltage (V_BR).

Microsemi also offers numerous other TVS products to meet

higher or lower power demands and special applications.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Protection from switching transients and induced RF

•

Available in both Unidirectional and Bidirectional

construction (Bidirectional with C or CA suffix)

Protection from ESD, and EFT per IEC 61000-4-2 and

IEC 61000-4-4

•

Selections for 10 to 400 volt Standoff Voltages V_WM

•

Secondary lightning protection per IEC61000-4-5 with

42 Ohms source impedance:

Suppresses transients up to 30 kW @ 10/1000 µs and 200

kW @ 8/20 µs (see Figure 1)

Class 1,2,3,4: PLAD30KP10 - PLAD30KP400A or CA

•

Fast response

Class 5: PLAD30KP10 - PLAD30KP400A or CA (short

distance)

Optional 100% screening for avionics grade is available

by adding MA prefix to part number for added 100%

temperature cycle -55^oC to +125^oC (10X) as well as surge

(3X) and 24 hours HTRB with post test V_Z& I_R(in the

operating direction for unidirectional or both directions for

bidirectional)

Class 5: PLAD30KP10 - PLAD30KP220A or CA (long

distance)

•

Secondary lightning protection per IEC61000-4-5 with

12 Ohms source impedance:

Class 1,2, 3: PLAD30KP10 to PLAD30KP400A or CA

Class 4: PLAD30KP10 to PLAD30KP220A or CA

•

Options for screening in accordance with MIL-PRF-19500

for JAN, JANTX, and JANTXV are available by adding MQ,

MX, or MV prefixes respectively to part numbers.

Secondary lightning protection per IEC61000-4-5 with 2

Ohms source impedance:

Class 2: PLAD30KP10 to PLAD30KP400A or CA

Class 3: PLAD30KP10 to PLAD30KP220A or CA

Class 4: PLAD30KP10 to PLAD30KP110A or CA

•

Moisture classification is Level 1 with no dry pack required

per IPC/JEDEC J-STD-020B

•

RoHS Compliant devices available by adding an “e3” suffix

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

Peak Pulse Power dissipation at 25^ºC: 30,000 watts at

•

CASE: Void-free transfer molded thermosetting

epoxy body meeting UL94V-0

10/1000 μs (also see Figures 1 and 2)

•

Impulse repetition rate (duty factor): 0.05%

FINISH: Tin-Lead or RoHS Compliant annealed

matte-Tin plating readily solderable per MIL-

STD-750, method 2026

_clamping(0 volts to V_(BR)min.): < 100 ps theoretical for

unidirectional and < 5 ns for bidirectional

Operating & Storage temperature: -65^ºC to +150^ºC

Thermal resistance: 0.5^ºC/W junction to case, or 50^ºC/W

junction to ambient when mounted on FR4 PC board with

recommended mounting pad with 1 oz Cu (see last page)

•

MARKING: Body marked with part number

•

POLARITY: For unidirectional devices, the

cathode is on the metal backside (package

bottom)

Steady-State Power dissipation: 250 watts at T_c= 25^oC,

or 2.5 watts at T_A= 25^ºC when mounted on FR4 PC

board as described for thermal resistance above

•

WEIGHT: 1.7-2.0 grams (approximate)

•

TAPE & REEL option: Standard per EIA-296

for axial package (add “TR” suffix to part

number)

•

Forward Surge: 1500 Amps (theoretical) at 8.3 ms half-

sine wave for unidirectional devices only

Solder temperatures: 260 ^ºC for 10 s (maximum)

•

See package dimension on last page

9-12-2007 Rev G

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4 5

中文翻译

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与MVPLAD30KP130C相关器件

型号	品牌	获取价格	描述	数据表
MVPLAD30KP130CA	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 30000W, 130V V(RWM), Bidirectional, 1 Element, Silicon, PL
MVPLAD30KP130CAE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 30000W, 130V V(RWM), Bidirectional, 1 Element, Silicon, RO
MVPLAD30KP130CAE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 30000W, 130V V(RWM), Bidirectional, 1 Element, Silicon, RO
MVPLAD30KP130CATR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 30000W, 130V V(RWM), Bidirectional, 1 Element, Silicon, PL
MVPLAD30KP130CE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 30000W, 130V V(RWM), Bidirectional, 1 Element, Silicon, RO
MVPLAD30KP130CE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 30000W, 130V V(RWM), Bidirectional, 1 Element, Silicon, RO
MVPLAD30KP130CTR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 30000W, 130V V(RWM), Bidirectional, 1 Element, Silicon, PL
MVPLAD30KP130E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 30000W, 130V V(RWM), Unidirectional, 1 Element, Silicon, R
MVPLAD30KP130E3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 30000W, 130V V(RWM), Unidirectional, 1 Element, Silicon, R
MVPLAD30KP130TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 30000W, 130V V(RWM), Unidirectional, 1 Element, Silicon, P

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