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MVPLAD30KP130E3 PDF预览

MVPLAD30KP130E3

更新时间： 2024-11-14 04:41:39
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
5页 268K
描述
Trans Voltage Suppressor Diode, 30000W, 130V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-1

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MVPLAD30KP130E3 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：ROHS COMPLIANT, PLASTIC PACKAGE-1针数：1
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.77
最大击穿电压：176 V最小击穿电压：144 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码：S-PSSO-G1
JESD-609代码：e3湿度敏感等级：1
最大非重复峰值反向功率耗散：30000 W元件数量：1
端子数量：1封装主体材料：PLASTIC/EPOXY
封装形状：SQUARE封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性：UNIDIRECTIONAL
最大功率耗散：2.5 W认证状态：Not Qualified
最大重复峰值反向电压：130 V表面贴装：YES
技术：AVALANCHE端子面层：MATTE TIN
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

MVPLAD30KP130E3 数据手册

 浏览型号MVPLAD30KP130E3的Datasheet PDF文件第2页浏览型号MVPLAD30KP130E3的Datasheet PDF文件第3页浏览型号MVPLAD30KP130E3的Datasheet PDF文件第4页浏览型号MVPLAD30KP130E3的Datasheet PDF文件第5页 
PLAD30KP10 thru PLAD30KP400CA, e3  
30kW Surface Mount Transient  
Voltage Suppressor  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
These Microsemi 30 kW Transient Voltage Suppressors (TVSs)  
are designed for applications requiring protection of voltage-  
sensitive electronic devices that may be damaged by harsh or  
severe voltage transients including lightning per IEC61000-4-5  
and class levels with various source impedances described  
herein. This series is available in 10 to 400 volt Standoff  
Voltages (VWM) in both unidirectional and bi-directional with either  
5% or 10% tolerances of the Breakdown Voltage (VBR).  
Microsemi also offers numerous other TVS products to meet  
higher or lower power demands and special applications.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
Protection from switching transients and induced RF  
•
Available in both Unidirectional and Bidirectional  
construction (Bidirectional with C or CA suffix)  
Protection from ESD, and EFT per IEC 61000-4-2 and  
IEC 61000-4-4  
•
•
Selections for 10 to 400 volt Standoff Voltages VWM  
•
Secondary lightning protection per IEC61000-4-5 with  
42 Ohms source impedance:  
Suppresses transients up to 30 kW @ 10/1000 µs and 200  
kW @ 8/20 µs (see Figure 1)  
Class 1,2,3,4: PLAD30KP10 - PLAD30KP400A or CA  
•
•
Fast response  
Class 5: PLAD30KP10 - PLAD30KP400A or CA (short  
distance)  
Optional 100% screening for avionics grade is available  
by adding MA prefix to part number for added 100%  
temperature cycle -55oC to +125oC (10X) as well as surge  
(3X) and 24 hours HTRB with post test VZ & IR (in the  
operating direction for unidirectional or both directions for  
bidirectional)  
Class 5: PLAD30KP10 - PLAD30KP220A or CA (long  
distance)  
•
•
Secondary lightning protection per IEC61000-4-5 with  
12 Ohms source impedance:  
Class 1,2, 3: PLAD30KP10 to PLAD30KP400A or CA  
Class 4: PLAD30KP10 to PLAD30KP220A or CA  
•
Options for screening in accordance with MIL-PRF-19500  
for JAN, JANTX, and JANTXV are available by adding MQ,  
MX, or MV prefixes respectively to part numbers.  
Secondary lightning protection per IEC61000-4-5 with 2  
Ohms source impedance:  
Class 2: PLAD30KP10 to PLAD30KP400A or CA  
Class 3: PLAD30KP10 to PLAD30KP220A or CA  
Class 4: PLAD30KP10 to PLAD30KP110A or CA  
•
Moisture classification is Level 1 with no dry pack required  
per IPC/JEDEC J-STD-020B  
•
RoHS Compliant devices available by adding an “e3” suffix  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
Peak Pulse Power dissipation at 25ºC: 30,000 watts at  
•
•
CASE: Void-free transfer molded thermosetting  
epoxy body meeting UL94V-0  
10/1000 μs (also see Figures 1 and 2)  
•
•
Impulse repetition rate (duty factor): 0.05%  
FINISH: Tin-Lead or RoHS Compliant annealed  
matte-Tin plating readily solderable per MIL-  
STD-750, method 2026  
t
clamping (0 volts to V(BR) min.): < 100 ps theoretical for  
unidirectional and < 5 ns for bidirectional  
Operating & Storage temperature: -65ºC to +150ºC  
Thermal resistance: 0.5ºC/W junction to case, or 50ºC/W  
junction to ambient when mounted on FR4 PC board with  
recommended mounting pad with 1 oz Cu (see last page)  
•
•
MARKING: Body marked with part number  
•
•
POLARITY: For unidirectional devices, the  
cathode is on the metal backside (package  
bottom)  
Steady-State Power dissipation: 250 watts at Tc = 25oC,  
or 2.5 watts at TA = 25ºC when mounted on FR4 PC  
board as described for thermal resistance above  
•
•
WEIGHT: 1.7-2.0 grams (approximate)  
•
TAPE & REEL option: Standard per EIA-296  
for axial package (add “TR” suffix to part  
number)  
•
•
Forward Surge: 1500 Amps (theoretical) at 8.3 ms half-  
sine wave for unidirectional devices only  
Solder temperatures: 260 ºC for 10 s (maximum)  
•
See package dimension on last page  
Copyright © 2007  
9-12-2007 Rev G  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
12345

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MVPLAD30KP13ATR MICROSEMI

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 		Trans Voltage Suppressor Diode, 30000W, 13V V(RWM), Bidirectional, 1 Element, Silicon, PLA
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 		Trans Voltage Suppressor Diode, 30000W, 13V V(RWM), Bidirectional, 1 Element, Silicon, ROH
MVPLAD30KP13CAE3TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 30000W, 13V V(RWM), Bidirectional, 1 Element, Silicon, ROH
MVPLAD30KP13CATR MICROSEMI

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 		Trans Voltage Suppressor Diode, 30000W, 13V V(RWM), Bidirectional, 1 Element, Silicon, PLA
MVPLAD30KP13CE3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 30000W, 13V V(RWM), Bidirectional, 1 Element, Silicon, ROH

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