5秒后页面跳转
MVGSF1N02L PDF预览

MVGSF1N02L

更新时间: 2024-11-24 01:21:03
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 160K
描述
Power MOSFET

MVGSF1N02L 数据手册

 浏览型号MVGSF1N02L的Datasheet PDF文件第2页浏览型号MVGSF1N02L的Datasheet PDF文件第3页浏览型号MVGSF1N02L的Datasheet PDF文件第4页 
MGSF1N02L, MVGSF1N02L  
Power MOSFET  
750 mAmps, 20 Volts  
NChannel SOT23  
These miniature surface mount MOSFETs low R  
assure  
DS(on)  
www.onsemi.com  
minimal power loss and conserve energy, making these devices ideal  
for use in space sensitive power management circuitry. Typical  
applications are dcdc converters and power management in portable  
and batterypowered products such as computers, printers, PCMCIA  
cards, cellular and cordless telephones.  
750 mAMPS, 20 VOLTS  
RDS(on) = 90 mW  
NChannel  
Features  
3
Low R  
Provides Higher Efficiency and Extends Battery Life  
Miniature SOT23 Surface Mount Package Saves Board Space  
DS(on)  
MVGSF Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AECQ101  
Qualified and PPAP Capable*  
1
These Devices are PbFree and are RoHS Compliant  
2
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
MARKING DIAGRAM/  
PIN ASSIGNMENT  
Rating  
Symbol  
Value  
Unit  
DraintoSource Voltage  
V
20  
Vdc  
DSS  
3
Drain  
GatetoSource Voltage Continuous  
V
20  
Vdc  
GS  
1
Drain Current  
SOT23  
CASE 318  
STYLE 21  
N2 M G  
I
750  
2000  
mA  
Continuous @ T = 25°C  
Pulsed Drain Current (t 10 ms)  
D
A
G
I
DM  
p
Total Power Dissipation @ T = 25°C  
P
400  
55 to 150  
300  
mW  
°C  
A
D
1
2
Gate  
Source  
Operating and Storage Temperature Range T , T  
J
stg  
Thermal Resistance, JunctiontoAmbient  
R
°C/W  
°C  
N2  
M
G
= Device Code  
= Date Code*  
= PbFree Package  
q
JA  
Maximum Lead Temperature for Soldering  
Purposes, 1/8from case for 10 seconds  
T
260  
L
(Note: Microdot may be in either location)  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
*Date Code orientation and overbar may vary  
depending upon manufacturing location.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MGSF1N02LT1G  
SOT23  
(PbFree)  
3000 / Tape &  
Reel  
MVGSF1N02LT1G*  
SOT23  
(PbFree)  
3000 / Tape &  
Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 1996  
1
Publication Order Number:  
October, 2016 Rev. 7  
MGSF1N02LT1/D  

与MVGSF1N02L相关器件

型号 品牌 获取价格 描述 数据表
MVGSF1N02LT1G ONSEMI

获取价格

Power MOSFET
MVGSF1N03L TYSEMI

获取价格

Power MOSFET 30 V, 2.1 A, Single N−Channel,
MVGSF1N03LT1G TYSEMI

获取价格

Power MOSFET 30 V, 2.1 A, Single N−Channel,
MVGSF1N03LT1G ONSEMI

获取价格

单 N 沟道,功率 MOSFET,30V,2.1A,100mΩ
MVH MTRONPTI

获取价格

8 pin DIP, 5.0 Volt, HCMOS/TTL, VCXO
MVH_07 MTRONPTI

获取价格

8 pin DIP, 5.0 Volt, HCMOS/TTL, VCXO
MVH11V1AD MTRONPTI

获取价格

8 pin DIP, 5.0 Volt, HCMOS/TTL, VCXO
MVH11V1AD03.0000MHZ MTRONPTI

获取价格

CMOS/TTL Output Clock Oscillator, 3MHz Nom, DIP-8/4
MVH11V1AD50.0000MHZ MTRONPTI

获取价格

CMOS/TTL Output Clock Oscillator, 3MHz Min, 50MHz Max, 50MHz Nom, DIP-8/4
MVH11V1ADFREQ MTRONPTI

获取价格

暂无描述