MGSF1N02L, MVGSF1N02L
TYPICAL ELECTRICAL CHARACTERISTICS
0.14
0.2
0.18
0.16
0.14
0.12
0.1
150°C
0.13
150°C
0.12
V
GS
= 4.5 V
V
GS
= 10 V
0.11
0.1
0.09
0.08
0.07
0.06
0.05
0.04
25°C
25°C
-55°C
-55°C
0.08
0.06
0.04
0
0.1 0.2 0.3
0.4 0.5
0.6 0.7
0.8 0.9
1
0
0.2
0.4 0.6
0.8
1
1.2 1.4 1.6 1.8
2
I , DRAIN CURRENT (AMPS)
D
I , DRAIN CURRENT (AMPS)
D
Figure 4. On−Resistance versus Drain Current
Figure 3. On−Resistance versus Drain Current
1.6
1.5
1.4
1.3
1.2
1.1
1
10
8
V
= 16 V
DS
V
I
= 10 V
GS
= 2 A
T = 25°C
J
D
V
= 4.5 V
GS
= 1 A
6
I
D
4
0.9
0.8
0.7
0.6
I
D
= 2.0 A
3000
2
0
-ꢀ55
-5
45
95
145
0
1000
2000
4000
5000
6000
T , JUNCTION TEMPERATURE (°C)
J
Q , TOTAL GATE CHARGE (pC)
T
Figure 6. Gate Charge
Figure 5. On−Resistance Variation with Temperature
1
1000
100
10
V
= 0 V
f = 1 MHz
GS
T = 25°C
J
T = 150°C
25°C
-55°C
J
0.1
C
iss
C
C
oss
0.01
rss
0.001
0
5
10
V , DRAIN-TO-SOURCE VOLTAGE (Volts)
DS
15
20
0
0.2
0.4
0.6
0.8
1
V
SD
, DIODE FORWARD VOLTAGE (VOLTS)
Figure 7. Body Diode Forward Voltage
Figure 8. Capacitance
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