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MVGSF1N03LT1G PDF预览

MVGSF1N03LT1G

更新时间： 2024-01-06 18:14:36
品牌 Logo 应用领域
安森美 - ONSEMI PC小信号场效应晶体管
页数 文件大小 规格书
4页 78K
描述
单 N 沟道，功率 MOSFET，30V，2.1A，100mΩ

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MVGSF1N03LT1G 技术参数

是否无铅：不含铅生命周期：Active
包装说明：,针数：3
Reach Compliance Code：compliantECCN代码：EAR99
Factory Lead Time：10 weeks风险等级：1.55
Samacsys Confidence：3Samacsys Status：Released
2D Presentation：https://componentsearchengine.com/2D/0T/225909.1.1.pngSchematic Symbol：https://componentsearchengine.com/symbol.php?partID=225909
PCB Footprint：https://componentsearchengine.com/footprint.php?partID=2259093D View：https://componentsearchengine.com/viewer/3D.php?partID=225909
Samacsys PartID：225909Samacsys Image：https://componentsearchengine.com/Images/9/MVGSF1N03LT1G.jpg
Samacsys Thumbnail Image：https://componentsearchengine.com/Thumbnails/1/MVGSF1N03LT1G.jpgSamacsys Pin Count：3
Samacsys Part Category：MOSFET (N-Channel)Samacsys Package Category：SOT23 (3-Pin)
Samacsys Footprint Name：SOT-23 (TO-236) CASE 318-08Samacsys Released Date：2015-08-14 08:49:00
Is Samacsys：N配置：Single
最大漏极电流 (Abs) (ID)：1.6 AFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-609代码：e3湿度敏感等级：1
最高工作温度：150 °C极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：0.42 W子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin (Sn)
Base Number Matches：1

MVGSF1N03LT1G 数据手册

 浏览型号MVGSF1N03LT1G的Datasheet PDF文件第2页浏览型号MVGSF1N03LT1G的Datasheet PDF文件第3页浏览型号MVGSF1N03LT1G的Datasheet PDF文件第4页 
MGSF1N03LT1  
Preferred Device  
Power MOSFET  
30 V, 2.1 A, Single N−Channel, SOT−23  
These miniature surface mount MOSFETs low R  
assure  
DS(on)  
minimal power loss and conserve energy, making these devices ideal  
for use in space sensitive power management circuitry. Typical  
applications are dc−dc converters and power management in portable  
and battery−powered products such as computers, printers, PCMCIA  
cards, cellular and cordless telephones.  
http://onsemi.com  
V
R
TYP  
I MAX  
D
(BR)DSS  
DS(on)  
• Low R  
Provides Higher Efficiency and Extends Battery Life  
DS(on)  
80 mW @ 10 V  
• Miniature SOT−23 Surface Mount Package Saves Board Space  
• Pb−Free Package is Available  
30 V  
2.1 A  
125 mW @ 4.5 V  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
N−Channel  
Parameter  
Drain−to−Source Voltage  
Symbol Value  
Unit  
V
V
30  
±20  
2.1  
D
DSS  
Gate−to−Source Voltage  
V
V
GS  
Continuous Drain  
Current (Note 1)  
Steady T = 25°C  
State  
I
D
A
A
T = 85°C  
A
1.5  
G
t ≤ 10 s T = 25°C  
2.8  
A
Power Dissipation  
(Note 1)  
Steady T = 25°C  
State  
P
0.73  
W
A
A
D
S
Continuous Drain  
Current (Note 2)  
Steady T = 25°C  
I
D
1.6  
1.1  
A
State  
MARKING DIAGRAM/  
PIN ASSIGNMENT  
T = 85°C  
A
Power Dissipation  
(Note 2)  
T = 25°C  
A
P
D
0.42  
W
3
3
Drain  
Pulsed Drain Current  
t = 10 ms  
p
I
6.0  
A
V
DM  
1
2
ESD Capability (Note 3)  
C = 100 pF,  
RS = 1500 W  
ESD  
125  
N3  
SOT−23  
CASE 318  
STYLE 21  
Operating Junction and Storage Temperature  
T ,  
−55 to  
150  
°C  
J
T
STG  
1
Gate  
2
Source  
Source Current (Body Diode)  
I
S
2.1  
A
N3  
M
= Specific Device Code  
= Date Code  
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 s)  
T
L
260  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
ORDERING INFORMATION  
Symbol  
Max  
170  
100  
300  
Unit  
†
Device  
Package  
SOT−23  
SOT−23  
Shipping  
Junction−to−Ambient − Steady State (Note 1)  
Junction−to−Ambient − t < 10 s (Note 1)  
Junction−to−Ambient − Steady State (Note 2)  
R
°C/W  
q
q
q
JA  
JA  
JA  
MGSF1N03LT1  
MGSF1N03LT3  
MGSF1N03LT3G  
3000/Tape & Reel  
10000/Tape & Reel  
R
R
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. Surface−mounted on FR4 board using 1 in sq pad size.  
2. Surface−mounted on FR4 board using the minimum recommended pad size.  
3. ESD Rating Information: HBM Class 0.  
SOT−23 10000/Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
March, 2005 − Rev. 7  
MGSF1N03LT1/D  
 
1234

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