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MV1N4779TR PDF预览

MV1N4779TR

更新时间: 2024-11-24 20:54:59
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管
页数 文件大小 规格书
2页 255K
描述
Zener Diode, 8.5V V(Z), 5%, 0.25W, Silicon, DO-204AA, HERMETIC SEALED, GLASS, DO-7, 2 PIN

MV1N4779TR 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active零件包装代码:DO-7
包装说明:O-LALF-W2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.46
Is Samacsys:N外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJEDEC-95代码:DO-204AA
JESD-30 代码:O-LALF-W2JESD-609代码:e0
元件数量:1端子数量:2
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.25 W认证状态:Not Qualified
标称参考电压:8.5 V表面贴装:NO
技术:ZENER端子面层:TIN LEAD
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIED电压温度Coeff-Max:0.0425 mV/ °C
最大电压容差:5%Base Number Matches:1

MV1N4779TR 数据手册

 浏览型号MV1N4779TR的Datasheet PDF文件第2页 
1N4775 thru 1N4784A  
8.5 Volt Temperature Compensated Zener  
Reference Diodes  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
The 1N4775 thru 1N4784A series of Zero-TC Reference Diodes provides a  
selection of 8.5 V nominal voltages and temperature coefficients to as low  
as 0.0005%/oC for minimal voltage change with temperature when operated  
at 7.5 mA. Options for screening similar to JAN, JANTX, JANTXV, and  
JANS also exist by using MQ, MX, MV or MSP respectively for part number  
prefixes and high reliability screening. Microsemi also offers numerous  
other Zener Reference Diode products for a variety of other voltages from  
6.2 V to 200 V  
DO-7  
(DO-204AA)  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
Provides minimal voltage changes over a broad  
temperature range for instrumentation and other  
circuit designs requiring a voltage reference  
JEDEC registered 1N4775 thru 1N4784A series  
Standard reference voltage of 8.5 V +/- 5%  
Internal metallurgical bonds  
Options for screening in accordance with MIL-PRF-  
19500 for JAN, JANTX, JANTXV, and JANS are  
available by adding MQ, MX, MV, or MSP prefixes  
respectively to part numbers. For example,  
designate “MX1N4779A” for a JANTX, or  
MV1N4784A for a JANTXV screen.  
Radiation Hardened devices available by changing  
the “1N” prefix to “RH”, e.g. RH4779A, RH4784A,  
etc. Also consult factory for “RH” data sheet  
brochure for other radiation hardened reference  
diode products.  
Temperature coefficient selections available from  
0.01%/ºC to 0.0005%/ºC  
Tight voltage tolerances available by adding  
tolerance 1%, 2%, 3%, etc. after part number for  
further identification, e.g. 1N4773A-2%, 1N4774A-  
1%, 1N4769-3%, 1N4769A-1%, etc.  
Flexible axial-leaded mounting terminals  
Nonsensitive to ESD per MIL-STD-750 Method 1020  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
Operating & StorageTemperature: -65oC to +175oC  
CASE: Hermetically sealed glass case with DO-7  
DC Power Dissipation: 250 mW @ TL = 25oC  
NOTE: For optimum voltage-temperature stability,  
the test current IZT = 0.5 or 1.0 mA as shown in  
Electrical Characteristics (less than 10 mW in  
dissipated power)  
(DO-204AA) package  
TERMINALS: Tin-lead plated and solderable per  
MIL-STD-750, Method 2026  
MARKING: Part number and cathode band  
POLARITY: Reference diode to be operated with  
the banded end positive with respect to the  
opposite end  
Solder temperatures: 260 oC for 10 s (maximum)  
TAPE & REEL option: Standard per EIA-296 (add  
“TR” suffix to part number)  
WEIGHT: 0.2 grams.  
See package dimensions on last page  
Copyright 2003  
Microsemi  
Page 1  
8-19-2003 REV A  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

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