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MV1N5186US

更新时间： 2024-11-20 14:54:03
品牌 Logo 应用领域
美高森美 - MICROSEMI 快速恢复二极管
页数 文件大小 规格书
2页 127K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon, HERMETIC SEALED, GLASS, D-5B, 2 PIN

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中文翻译

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MV1N5186US 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active包装说明：O-LELF-R2
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.6其他特性：HIGH RELIABILITY, HIGH SURGE CAPABILITY
应用：FAST RECOVERY外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODEJESD-30 代码：O-LELF-R2
JESD-609代码：e0元件数量：1
相数：1端子数量：2
最高工作温度：175 °C最低工作温度：-65 °C
最大输出电流：3 A封装主体材料：GLASS
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
最大反向恢复时间：0.15 µs表面贴装：YES
端子面层：TIN LEAD端子形式：WRAP AROUND
端子位置：END处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

MV1N5186US 数据手册

 浏览型号MV1N5186US的Datasheet PDF文件第2页 
1N5186US thru 1N5190US  
VOIDLESS-HERMETICALLY SEALED  
SURFACE MOUNT FAST RECOVERY  
GLASS RECTIFIERS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This “fast recovery” rectifier diode series is ideal for high-reliability applications  
where a failure cannot be tolerated. These industry-recognized 3.0 Amp rated  
rectifiers for working peak reverse voltages from 100 to 600 volts are hermetically  
sealed with voidless-glass construction using an internal “Category I” metallurgical  
bond. These devices are also available in military qualified axial-leaded packages  
by deleting the “US” suffix. Microsemi also offers numerous other rectifier products  
to meet higher and lower current ratings with various recovery time speed  
requirements including fast and ultrafast device types in both through-hole and  
surface mount packages.  
Package “E”  
or D-5B  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
Surface mount equivalent to the popular JEDEC  
registered 1N5186 to 1N5190 series  
•
•
•
Fast recovery 3 Amp rectifiers 100 to 600 V  
Military and other high-reliability applications  
General rectifier applications including bridges,  
half-bridges, catch diodes, etc.  
High forward surge current capability  
Extremely robust construction  
•
•
•
•
•
Voidless hermetically sealed glass package  
Triple-Layer Passivation  
•
•
•
Internal “Category I” Metallurgical bonds  
Working Peak Reverse Voltage 100 to 600 Volts.  
Low thermal resistance  
Further options in screening in accordance with MIL-  
PRF-19500/424 for JAN, JANTX, and JANTXV by adding  
a MQ, MX, or MV prefix respectively, e.g. MX1N5186US,  
MV1N5187US, etc.  
•
Controlled avalanche with peak reverse power  
capability  
•
Inherently radiation hard as described in  
Microsemi MicroNote 050  
•
Axial-leaded package equivalents also available (see  
separate data sheet for 1N5186 thru 1N5190)  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
•
•
Junction & Storage Temperature: -65oC to +175oC  
Thermal Resistance: 10oC/W junction to end cap  
Thermal Impedance: 1.5oC/W @ 10 ms heating time  
• CASE: Hermetically sealed voidless hard glass with  
Tungsten slugs  
• TERMINATIONS: End caps are Copper with Tin/Lead  
(Sn/Pb) finish. Note: Previous inventory had solid  
Silver end caps with Tin/Lead (Sn/Pb) finish.  
Average Rectified Forward Current (IO): 3.0 Amps @ TA =  
25ºC and 0.700 Amps at TA = 150ºC  
• MARKING: Cathode band only  
•
•
Forward Surge Current: 80 Amps @ 8.3 ms half-sine  
Solder Temperatures: 260ºC for 10 s (maximum)  
• POLARITY: Cathode indicated by band  
• TAPE & REEL option: Standard per EIA-481-B  
• WEIGHT: 539 mg  
• See package dimensions on last page  
ELECTRICAL CHARACTERISTICS  
WORKING  
PEAK  
REVERSE  
VOLTAGE  
MINIMUM  
BREAKDOWN  
VOLTAGE  
FORWARD  
VOLTAGE  
MAXIMUM  
REVERSE  
CURRENT  
MAXIMUM  
REVERSE  
RECOVERY  
TIME  
AVERAGE  
RECTIFIED  
CURRENT AMPS  
V
F
V
V
@ 50μA  
I
@ V  
t
I
@ 9A (pulsed)  
TYPE  
RWM  
BR  
R
25oC  
µA  
RWM  
rr  
O
MIN  
MAX  
100oC  
25oC  
AMPS  
3.0  
3.0  
3.0  
150oC  
AMPS  
0.7  
0.7  
0.7  
VOLTS  
100V  
200V  
400V  
500V  
600V  
VOLTS  
VOLTS  
VOLTS  
ns  
150  
200  
250  
300  
400  
µA  
1N5186US  
1N5187US  
1N5188US  
1N5189US  
1N5190US  
120V  
240V  
480V  
550V  
660V  
0.9V  
1.5V  
2.0  
100  
3.0  
3.0  
0.7  
0.7  
Copyright © 2007  
4-27-2007 REV B  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
12

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