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MV1N5187US

更新时间： 2024-11-20 15:45:11
品牌 Logo 应用领域
美高森美 - MICROSEMI 快速恢复二极管
页数 文件大小 规格书
2页 281K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon, HERMETICALLY SEALED GLASS, D-5B, 2 PIN

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MV1N5187US 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active包装说明：O-LELF-R2
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.6应用：FAST RECOVERY
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JESD-30 代码：O-LELF-R2JESD-609代码：e0
元件数量：1相数：1
端子数量：2最高工作温度：175 °C
最低工作温度：-65 °C最大输出电流：3 A
封装主体材料：GLASS封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified最大反向恢复时间：0.2 µs
表面贴装：YES端子面层：TIN LEAD
端子形式：WRAP AROUND端子位置：END
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

MV1N5187US 数据手册

 浏览型号MV1N5187US的Datasheet PDF文件第2页 
1N5186US thru 1N5190US  
VOIDLESS-HERMETICALLY SEALED  
SURFACE MOUNT FAST RECOVERY  
GLASS RECTIFIERS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This “fast recovery” rectifier diode series is ideal for high-reliability applications  
where a failure cannot be tolerated. These industry-recognized 3.0 Amp rated  
rectifiers for working peak reverse voltages from 100 to 600 volts are hermetically  
sealed with voidless-glass construction using an internal “Category I” metallurgical  
bond. These devices are also available in military qualified axial-leaded packages  
by deleting the “US” suffix. Microsemi also offers numerous other rectifier products  
to meet higher and lower current ratings with various recovery time speed  
requirements including fast and ultrafast device types in both through-hole and  
surface mount packages.  
Package “E”  
or D-5B  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
Surface mount equivalent to the popular JEDEC  
•
Fast recovery 3 Amp rectifiers 100 to 600 V  
registered 1N5186 to 1N5190 series  
•
•
Military and other high-reliability applications  
General rectifier applications including bridges,  
half-bridges, catch diodes, etc.  
•
•
•
•
•
Voidless hermetically sealed glass package  
Triple-Layer Passivation  
Internal “Category I” Metallurgical bonds  
Working Peak Reverse Voltage 100 to 600 Volts.  
Further options in screening in accordance with MIL-  
PRF-19500/424 for JAN, JANTX, and JANTXV by adding  
a MQ, MX, or MV prefix respectively, e.g. MX1N5186US,  
MV1N5187US, etc.  
•
•
•
High forward surge current capability  
Extremely robust construction  
Low thermal resistance  
•
Controlled avalanche with peak reverse power  
capability  
•
Inherently radiation hard as described in  
Microsemi MicroNote 050  
•
Axial-leaded package equivalents also available (see  
separate data sheet for 1N5186 thru 1N5190)  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
•
•
Junction & Storage Temperature: -65oC to +175oC  
Thermal Resistance: 10oC/W junction to end cap  
Thermal Impedance: 1.5oC/W @ 10 ms heating time  
Average Rectified Forward Current (IO): 3.0 Amps @ TA =  
25ºC and 0.700 Amps at TA = 150ºC  
•
•
CASE: Hermetically sealed voidless hard glass  
with Tungsten slugs  
TERMINATIONS: End caps are solid silver with  
Tin/Lead (Sn/Pb) finish  
MARKING: Cathode band only  
POLARITY: Cathode indicated by band  
TAPE & REEL option: Standard per EIA-481-B  
WEIGHT: 539 mg  
•
•
•
•
•
•
•
Forward Surge Current: 80 Amps @ 8.3 ms half-sine  
Solder Temperatures: 260ºC for 10 s (maximum)  
See package dimensions on last page  
ELECTRICAL CHARACTERISTICS  
WORKING  
MINIMUM  
BREAKDOWN  
VOLTAGE  
FORWARD  
VOLTAGE  
MAXIMUM  
REVERSE  
CURRENT  
MAXIMUM  
REVERSE  
RECOVERY  
TIME  
AVERAGE  
RECTIFIED  
PEAK  
REVERSE  
VOLTAGE  
CURRENT AMPS  
V
F
V
V
@ 50µA  
I
@ V  
t
I
@ 9A (pulsed)  
TYPE  
RWM  
BR  
R
RWM  
rr  
O
MIN  
MAX  
25oC  
µA  
100oC  
25oC  
AMPS  
3.0  
150oC  
AMPS  
0.7  
VOLTS  
100V  
200V  
400V  
500V  
600V  
VOLTS  
VOLTS  
VOLTS  
ns  
150  
200  
250  
300  
400  
µA  
1N5186US  
1N5187US  
1N5188US  
1N5189US  
1N5190US  
120V  
240V  
480V  
550V  
660V  
3.0  
0.7  
0.9V  
1.5V  
2.0  
100  
3.0  
0.7  
3.0  
0.7  
3.0  
0.7  
Copyright 2004  
Microsemi  
Page 1  
12-10-2004 REV A  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
12

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MV1N5221A-1 MICROSEMI

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MV1N5221A-1E3 MICROSEMI

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MV1N5221A-1E3TR MICROSEMI

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 		Zener Diode, 2.4V V(Z), 10%, 0.48W, Silicon, Unidirectional, DO-204AH, ROHS COMPLIANT, HER
MV1N5221A-1TR MICROSEMI

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 		Zener Diode, 2.4V V(Z), 10%, 0.48W, Silicon, Unidirectional, DO-204AH, HERMETIC SEALED, GL
MV1N5221AE3 MICROSEMI

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 		Zener Diode, 2.4V V(Z), 10%, 0.417W, Silicon, Unidirectional, DO-204AA, ROHS COMPLIANT, HE
MV1N5221AE3-1 MICROSEMI

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 		Zener Diode, 2.4V V(Z), 10%, 0.48W, Silicon, Unidirectional, DO-204AH, ROHS COMPLIANT, HER

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