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MURP20020CT PDF预览

MURP20020CT

更新时间: 2024-09-26 03:23:03
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管局域网超快恢复二极管快速恢复二极管
页数 文件大小 规格书
3页 116K
描述
ULTRAFAST RECTIFIERS 200 AMPERES, 200−400 VOLTS

MURP20020CT 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:PLASTIC, CASE 357C-03, POWERTAP II, 2 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.56
Is Samacsys:N其他特性:FREE WHEELING DIODE
应用:ULTRA FAST RECOVERY POWER外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.1 V
JESD-30 代码:R-PUFM-X2最大非重复峰值正向电流:800 A
元件数量:2相数:1
端子数量:2最高工作温度:175 °C
最大输出电流:100 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:300 V最大反向恢复时间:0.05 µs
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子面层:Nickel (Ni)
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:40Base Number Matches:1

MURP20020CT 数据手册

 浏览型号MURP20020CT的Datasheet PDF文件第2页浏览型号MURP20020CT的Datasheet PDF文件第3页 
MURP20020CT,  
MURP20040CT  
Preferred Devices  
POWERTAPt II Ultrafast  
SWITCHMODEt Power  
Rectifiers  
These stateoftheart POWERTAP II Ultrafast SWITCHMODE  
power rectifiers are designed for use in switching power supplies,  
inverters, and as free wheeling diodes.  
http://onsemi.com  
ULTRAFAST RECTIFIERS  
200 AMPERES, 200400 VOLTS  
Features  
Dual Diode Construction  
Low Leakage Current  
Low Forward Voltage  
1
3
175°C Operating Junction Temperature  
Labor Saving POWERTAP Package  
PbFree Packages are Available*  
2
Mechanical Characteristics:  
2
Case: Epoxy, Molded with Metal Heatsink Base  
Weight: 80 Grams (Approximately)  
1
Finish: All External Surfaces Corrosion Resistant  
Top Terminal Torque: 25 40 lbin Max  
POWERTAP II  
CASE 357C  
PLASTIC  
3
Base Plate Torques: See Procedure Given in the Package Outline  
Section  
MAXIMUM RATINGS  
MARKING DIAGRAM  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
V
V
RRM  
RWM  
R
V
DC Blocking Voltage  
MURP20020CT  
MURP20040CT  
V
300  
400  
AYYWWG  
UP200x0  
Average Rectified Forward Current  
I
A
A
A
F(AV)  
@ T = 150°C Per Device  
200  
100  
L
@ T = 125°C Per Leg  
L
A
= Assembly Location  
= Year  
= Work Week  
YY  
WW  
G
Peak Repetitive Surge Current Per Leg  
(Surge applied at rated load conditions  
halfwave, single phase, 60 Hz)  
I
200  
FRM  
= PbFree Package  
UP200x0 = Device Code  
x = 2 or 4  
Nonrepetitive Peak Surge Current Per Leg  
(Surge applied at rated load conditions  
halfwave, single phase, 60 Hz)  
I
FSM  
800  
ORDERING INFORMATION  
Operating Junction Temperature  
Storage Temperature  
T
55 to +175  
55 to +150  
°C  
°C  
J
T
stg  
Device  
MURP20020CT  
Package  
Shipping  
THERMAL CHARACTERISTICS  
Rating  
POWERTAP II 25 Units/Tray  
Symbol  
Max  
Unit  
MURP20020CTG POWERTAP II 25 Units/Tray  
(PbFree)  
Thermal Resistance, JunctiontoLead  
R
q
JC  
0.45  
°C/W  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
MURP20040CT  
POWERTAP II 25 Units/Tray  
MURP20040CTG POWERTAP II 25 Units/Tray  
(PbFree)  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
September, 2006 Rev. 6  
MURP20020CT/D  

MURP20020CT 替代型号

型号 品牌 替代类型 描述 数据表
MURP20020CT MOTOROLA

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